• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.382-383
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• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.391-394
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• 2008

Durability of product is an important technical parameter of a current interception device (CID) filter. This parameter is influenced by several factors, such as: environment condition, external force, shape of device, heat and so on. In this study, the effect of the geometry of the device on durability was carried out. The effect of shape on durability of device is presented by force-carrying capacity that a device can sustain a maximum external force. Studied parameters of the CID filter's geometry include clearance, thickness, and corner radius. Fracture criterion of Cockcroft and Latham was also used to predict the maximum force-carrying capacity of device.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1353-1356
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• 2004

In recent year, OLED(organic light emitted display) is used as the next generation device of FPD. OLED have been replacing the flat panel display device such as LCD, STN-LCD and TFT because this device is more efficient, economic and simple than those FPD devices, and this need not backlight system for visualization. The performance and efficiency of OLED is related with surface defect of ITO coated glass substrate. The typical surface defect of glass substrate is nonuniformity and bad surface roughness. ITO coated glass substrate is destroied for inspection about surface roughness and non-uniformity. Generally detection of the defects in the surface for ITO coated glass substrate is dependent on operator's experience. In this research, relationship between working parameter and surface non-uniformity is studied using regression analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.

• The Journal of Korea Robotics Society
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• v.17 no.3
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• pp.288-295
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• 2022

This study shows a system identification method of a balancing loading device for a stair climbing delivery robot. The balancing loading device is designed as a 2-axes gimbal structure and is interpreted as two independent pendulum structures for simplifying. The loading device's properties such as mass, moment of inertia, and position of the center of gravity are changeable for luggage. The system identification process of the loading device is required, and the controller should be optimized for the system in real-time. In this study, the system identification method is based on least squares method to estimate the unknown parameters of the loading device's dynamic equation. It estimates the unknown parameters by calculating them that minimize the error function between the real system's motion and the estimated system's motion. This study improves the accuracy of parameter estimation using a null space solution. The null space solution can produce the correct parameters by adjusting the parameter's relative sizes. The proposed system identification method is verified by the simulation to determine how close the estimated unknown parameters are to the real parameters.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.349-350
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• 2010

• Smart Structures and Systems
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• v.9 no.4
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• pp.373-392
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• 2012

Tracking control of systems with variable stiffness hysteresis using a gain-scheduled (GS) controller is developed in this paper. Variable stiffness hysteretic system is represented as quasi linear parameter dependent system with known bounds on parameters. Assuming that the parameters can be measured or estimated in real-time, a GS controller that ensures the performance and the stability of the closed-loop system over the entire range of parameter variation is designed. The proposed method is implemented on a spring-mass system which consists of a semi-active independently variable stiffness (SAIVS) device that exhibits hysteresis and precisely controllable stiffness change in real-time. The SAIVS system with variable stiffness hysteresis is represented as quasi linear parameter varying (LPV) system with two parameters: linear time-varying stiffness (parameter with slow variation rate) and stiffness of the friction-hysteresis (parameter with high variation rate). The proposed LPV-GS controller can accommodate both slow and fast varying parameter, which was not possible with the controllers proposed in the prior studies. Effectiveness of the proposed controller is demonstrated by comparing the results with a fixed robust $\mathcal{H}_{\infty}$ controller that assumes the parameter variation as an uncertainty. Superior performance of the LPV-GS over the robust $\mathcal{H}_{\infty}$ controller is demonstrated for varying stiffness hysteresis of SAIVS device and for different ranges of tracking displacements. The LPV-GS controller is capable of adapting to any parameter changes whereas the $\mathcal{H}_{\infty}$ controller is effective only when the system parameters are in the vicinity of the nominal plant parameters for which the controller is designed. The robust $\mathcal{H}_{\infty}$ controller becomes unstable under large parameter variations but the LPV-GS will ensure stability and guarantee the desired closed-loop performance.

• The Magazine of the IEIE
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• v.42 no.7
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• pp.45-53
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• 2015

Power 소자 기술은 digital & mixed signal device와 on-chip 구현을 위해서 CMOS 공정에 대한 기본 이해가 필요하다. CMOS 공정 기반 위에 power device 공정을 추가하면서 다양한 operation voltage의 power 소자를 구현하고, passive device 들을 동일 공정에서 구현하여 다양한 components 들로 power IC 제품을 design 할 수 있도록 modular process를 제공하는 것이 중요하다. 또한 power device로 주로 사용되는 LDMOS 소자에 대한 performance 개선을 위해 simulation을 통해 key device parameter들의 특성을 예측하고, 구조를 설계하는 것이 Si process 전에 중요한 일 중의 하나이다. 아울러 power management가 potable power, consumer electronics 및 green energy에서 가장 빠르게 성장하는 분야이므로, 차별화된 power 소자 기술을 확보하여 급변하는 시장 환경에 대응하는 것이 필요하다.