Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.02a
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- Pages.382-383
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- 2013
Gate-Controlled Spin-Orbit Interaction Parameter in a GaSb Two-Dimensional Hole gas Structure
- Park, Youn Ho (Spin Convergence Research Center, Korea Institute of Science and Technology) ;
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Koo, Hyun Cheol
(Spin Convergence Research Center, Korea Institute of Science and Technology) ;
- Shin, Sang-Hoon (Spin Convergence Research Center, Korea Institute of Science and Technology) ;
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Song, Jin Dong
(Spin Convergence Research Center, Korea Institute of Science and Technology) ;
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Kim, Hyung-Jun
(Spin Convergence Research Center, Korea Institute of Science and Technology) ;
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Chang, Joonyeon
(Spin Convergence Research Center, Korea Institute of Science and Technology) ;
- Han, Suk Hee (Spin Convergence Research Center, Korea Institute of Science and Technology) ;
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Choi, Heon-Jin
(Department of Materials Science and Engineering, Yonsei University)
- Published : 2013.02.18
Abstract
Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of