• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.95-98
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• 1999

The crystalline alignment of Ni substrates textured by RABiTS have a probability distribution in the surface plane. This makes it difficult to obtain a high quality of textures over all the range of a long Ni tape. In order to improve the textures of Ni tape, we have investigated a new method of texturing. We obtained non-cube textured Ni tapes by rolling and annealing a high purity Ni. In these tapes, the [001]-axes were tilted around the rolling direction, and the [100]-axes were parallel to the rolling direction. The average grain size was several cm$^2$. We deposited buffer layer (CeO$^2$/YSZ/CeO$^2$) and YBCO on those tapes. We found out that a YBCO film with grows normal with respect to the surface and this feature is independent of the tilting angles of the Ni [001]-axes.

• Progress in Superconductivity
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• 제12권2호
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• pp.110-113
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• 2011

We have grown a Nb/Gd bilayer on a$SiO_2$/Si substrate by using a DC magnetron sputtering system, which was fabricated in situ with silicon stencil masks. In order to investigate proximity effect of the Nb/Gd bilayer, we used a planar tunnel junction with an AlOx tunnel barrier by oxidizing the Al ground electrode at the bottom. A $Co_{60}Fe_{40}$ backing of Al was deposited so as to reduce the superconductivity of the Al, ensuring a normal counterelectrode. With a 50-nm-thick Nb layer, we have measured dI/dV (dynamic conductance) by varying the thickness of Gd, which can reveal the density of states (DOS) of the Nb/Gd bilayer as a function of the Gd thickness resulting from the proximity effect of a superconductor/ferromagnet bilayer (S/F). The SF proximity effect in Nb/Gd will be discussed in comparison to our previous results of the CoFe/Nb, Ni/Nb and CuNi/Nb proximity effect; Gd is expected to show different effects since Gd has f-electrons, while CoFe, Ni, and CuNi have only d-electrons. Our studies will focus on the triplet correlation in a superconducting pair.

• 한국재료학회지
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• 제13권7호
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• pp.460-464
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• 2003

Ni and Ti films were deposited by the thermal evaporator, and then annealed in the N$_2$ ambient at 300-80$0^{\circ}C$ in a RTA(rapid thermal annealing) system. Four point probe, AEM, FESEM, AES, and XPS were used to study the effects of Ti-capping layers on the thermal stability of NiSi thin films. The Ti-capped NiSi was stable up to $700^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after $600^{\circ}C$. These results were due to that the Ni in-diffusion and Si out-diffusion were retarded by the capping layer, resulting in the suppression of the formation of NiSi$_2$and Si grains at the surface.

• 폴리머
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• 제34권1호
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• pp.84-87
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• 2010

구리, 인디움, 셀레늄 이온을 포함한 혼합물을 전기화학적으로 환원하는 1회 반응으로 CIS 입자를 합성하였다. 합성된 입자를 폴리(옥틸티오펜/풀러렌으로 구성된 벌크이종접합에 블렌딩하거나 박막층으로 삽입하여 여러 가지 광기전셀을 제조하였다. CIS의 함량이 증가할수록 개방전압과 단락전류의 급격한 감소가 일어났다. 이러한 광기전성의 감소현상을 블렌드의 구조, 조성, 모폴로지를 분석 해석하였다.

• 한국진공학회지
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• 제8권4B호
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• pp.507-513
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• 1999

8mol%-yttria-stabilized zirconia(YSZ) thin films as oxygen ion conductor were deposited by rf-magnetron sputtering, and the oxygen gas sensors with the structure of $SiO_2$ substrate/Ni-NiO mixed reference layer/Pt/YSZ/Pt were fabricated and their oxygen sensing properties were investigated. The steady-state electro-motive force (EMF) values were measured as a function of oxygen partial pressure ($PO_2;form 1.013\times10^3 \textrm{Pa \;to}\; 1.013\times10^5$Pa) and operating temperature ($300^{\circ}C$ to $700^{\circ}C$). The fabricated YSZ oxygen sensor showed the best oxygen sensing properties at 50$0^{\circ}C$. However, oxygen sensing properties were very low at the temperature lower than 30$0^{\circ}C$ due to the lack of oxygen ion mobility and at the temperature higher than $700^{\circ}C$ due 새 intermixing of materials between the layers. Especially, the YSZ sensor operating at $500^{\circ}C$ and oxygen partial pressure above $1.565\times10^4$Pa showed the oxygen sensing properties close to the values predicted by ideal Nernst equation.

• 한국진공학회지
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• 제8권4A호
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• Advances in nano research
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• 제2권1호
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• pp.23-56
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• 2014

The significant growth of the Si photovoltaic industry has been so far limited due to the high cost of the Si photovoltaic system. In this regard, the most expensive factors are the intrinsic cost of silicon material and the Si solar cell fabrication processes. Conventional Si solar cells have p-n junctions inside for an efficient extraction of light-generated charge carriers. However, the p-n junction is normally formed through very expensive processes requiring very high temperature (${\sim}1000^{\circ}C$). Therefore, several systems are currently under study to form heterojunctions at low temperatures. Among them, carbon nanotube (CNT)/Si hybrid solar cells are very promising, with power conversion efficiency up to 15%. In these cells, the p-type Si layer is replaced by a semitransparent CNT film deposited at room temperature on the n-doped Si wafer, thus giving rise to an overall reduction of the total Si thickness and to the fabrication of a device with cheaper methods at low temperatures. In particular, the CNT film coating the Si wafer acts as a conductive electrode for charge carrier collection and establishes a built-in voltage for separating photocarriers. Moreover, due to the CNT film optical semitransparency, most of the incoming light is absorbed in Si; thus the efficiency of the CNT/Si device is in principle comparable to that of a conventional Si one. In this paper an overview of several factors at the basis of this device operation and of the suggested improvements to its architecture is given. In addition, still open physical/technological issues are also addressed.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• 한국세라믹학회지
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• 제31권11호
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• pp.1330-1336
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• 1994

Ta2O5 films were deposited on the p-Si(100) substrates by ECR-PECVD and annealed in O2 atmosphere. The thicknesses of Ta2O5/SiO2 layers were measured by an ellipsometer and a cross-sectional TEM. Annealing in O2 atmosphere enhanced the stoichiometry of the Ta2O5 film and reduced the impurity carbon content. Ta2O5 films were crystallized at the annealing temperatures above 75$0^{\circ}C$. The best leakage current characteristics and the maximum dielectric constant of Ta2O5/SiO2 film capacitor were observed in the specimen annealed at $700^{\circ}C$ and 75$0^{\circ}C$, respectively. The flat band voltage of the Al/Ta2O5/SiO2/p-Si MOS capacitor was varied in the range of -0.6~-1.6 V with the annealing temperature. The conduction mechanism in the Ta2O5 film, the variation of the effective oxide charge density with the annealing temperature, and the effective electric field distribution in the Ta2O5/SiO2 double layer were also discussed.

• 한국결정성장학회지
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• 제6권2호
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• pp.203-212
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• 1996

본 연구에서는 탄소/탄소 복합체의 내산화성을 증진시키기 위하여 CVD법에 의한 SiC 코팅과 PCS 함침법을 응용하여 실험을 행하였다. 전자현미경으로 시편의 미세구조를 관찰 한 결과 CVD법에 의해서는 표면에 SiC가 고르게 증착되었으며, 함침법에 의해서는 각 탄소 섬유의 표면에 PCS가 wetting된 후 SiC로의 전이가 잘 일어났음을 확인하였고, 이로 인하여 각 섬유들의 결합력을 증대시키고 기계적물성에 증진을 가져왔음을 확인하였다. PCS 함침된 탄소/탄소 복합체 시편은 함침되지 않은 시편에 비해 밀도는 25 %, 곡강도 값은 3.5배, 내산화성은 2.8배가 증가하는 현격한 기계적 물성이 증가함을 보였다. 이러한 증가는 CVD법에 의해 코팅된 탄소/탄소 복합체 사편보다도 우수한 기계적 성질을 나타내였다.