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http://dx.doi.org/10.3740/MRSK.2003.13.7.460

Effects of Ti-capping Layers on the Thermal Stability of NiSi  

Park, Soo-Jin (Department of Electronic Materials Engineering, The University of Suwon)
Lee, Keun-Woo (Department of Electronic Materials Engineering, The University of Suwon)
Kim, Ju-Youn (Division of Materials Engineering, Hanyang University)
Jun, Hyung-Tak (Division of Materials Engineering, Hanyang University)
Bae, Kyoo-Sik (Department of Electronic Materials Engineering, The University of Suwon)
Publication Information
Korean Journal of Materials Research / v.13, no.7, 2003 , pp. 460-464 More about this Journal
Abstract
Ni and Ti films were deposited by the thermal evaporator, and then annealed in the N$_2$ ambient at 300-80$0^{\circ}C$ in a RTA(rapid thermal annealing) system. Four point probe, AEM, FESEM, AES, and XPS were used to study the effects of Ti-capping layers on the thermal stability of NiSi thin films. The Ti-capped NiSi was stable up to $700^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after $600^{\circ}C$. These results were due to that the Ni in-diffusion and Si out-diffusion were retarded by the capping layer, resulting in the suppression of the formation of NiSi$_2$and Si grains at the surface.
Keywords
Ti-capped NiSi; thermal stability; interface roughness; Ni diffusion;
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