Oxygen detection of sensor cells based on YSZ (Yttria-Stabilized Zirconia) thin films

YSZ(yttria-stabilized zirconia) 박막을 이용한 센서 셀의 산소 감응

  • 박준용 (성균관대학교 재료공학과) ;
  • 배정운 (성균관대학교 재료공학과) ;
  • 황순원 (성균관대학교 재료공학과) ;
  • 김기동 (한국가스공사 연구개발센타) ;
  • 조영아 (한국가스공사 연구개발센타) ;
  • 전진석 (한국가스공사 연구개발센타) ;
  • 최동수 (한국가스공사 연구개발센타) ;
  • 염근영 (성균관대학교 재료공학과)
  • Published : 1999.12.01

Abstract

8mol%-yttria-stabilized zirconia(YSZ) thin films as oxygen ion conductor were deposited by rf-magnetron sputtering, and the oxygen gas sensors with the structure of $SiO_2$ substrate/Ni-NiO mixed reference layer/Pt/YSZ/Pt were fabricated and their oxygen sensing properties were investigated. The steady-state electro-motive force (EMF) values were measured as a function of oxygen partial pressure ($PO_2;form 1.013\times10^3 \textrm{Pa \;to}\; 1.013\times10^5$Pa) and operating temperature ($300^{\circ}C$ to $700^{\circ}C$). The fabricated YSZ oxygen sensor showed the best oxygen sensing properties at 50$0^{\circ}C$. However, oxygen sensing properties were very low at the temperature lower than 30$0^{\circ}C$ due to the lack of oxygen ion mobility and at the temperature higher than $700^{\circ}C$ due 새 intermixing of materials between the layers. Especially, the YSZ sensor operating at $500^{\circ}C$ and oxygen partial pressure above $1.565\times10^4$Pa showed the oxygen sensing properties close to the values predicted by ideal Nernst equation.

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