• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.17-20
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• 2018

IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.

• 한국환경과학회지
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• 제12권4호
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• pp.367-373
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• 2003

The focus of this study was to identify and describe environmental preconceptions held by pre-service elementary teachers about three issues : greenhouse effect, ozone layer depletion and acid rain. Two hundred and twenty nine pre-service elementary teachers participated in this study. A 36 question survey was created by one of the authors. The questions focused on the cause, effects, and interactions of three environmental issues greenhouse effect of one layer depletion and acid rain. Pre-service elementary teachers answered the questions on a Likert scale. An analysis of the survey data indicated that the majority of pre-service elementary teachers possess an array of incorrect conceptions about the causes and effects of the greenhouse effect ozone layer depletion, and acid rain. and also many pre-service elementary teachers thought that there were causal relationships among the increase in greenhouse effect, the destruction of ozone layer, and the increase of acid rain.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• 한국재료학회지
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• 제29권7호
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• pp.408-411
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• 2019

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at $150^{\circ}C$. The capacitance decreases at $200^{\circ}C$ ZTO heat treated at $150^{\circ}C$ shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

• 전기학회논문지
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• 제56권12호
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• 대한토목학회논문집
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• 제36권5호
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• pp.769-777
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• 2016

본 연구에서는 2층 누수대수층 시스템에 관한 Ward and Lough (2011)의 해석해를 이용하여 심부대수층 양수로 인한 하천수 감소량을 분석하였다. 하천변에 위치한 110개 지하수 관정 각각에 대해 양수량 대비 하천수 감소량을 산정한 결과 양수기간 5년 동안 작게는 0.1미만에서 크게는 0.8을 초과하여 관정 위치에 따라 큰 차이를 나타내었다. 단일 대수층 구조에 대한 Hunt (1999) 해석해 적용 결과와의 비교를 통해서 Ward and Lough (2011)의 해석해로 구한 하천수 감소량은 두 층의 수리특성의 상이함과 연직 방향 지체의 영향으로 평균적으로 약 50 % 만큼 작게 산정되었다. 충적층에 대한 하천고갈인자가 약 1,000 보다 크거나 암반층의 하천고갈인자가 100보다 큰 경우, 또는 연직 누수계수가 $10^{-5}s^{-1}$보다 작을 경우에는 지하수 양수가 하천수 감소에 미치는 영향이 작은 것으로 분석되었다. 또한 미 측정값인 충적층의 투수량계수 및 저류계수, 충적층과 연결된 하천의 하상수리전도도, 암반층 연직수리전도도 등의 크기에 따른 하천수 감소량의 변동 특성을 평가하였다.

• 한국수자원학회논문집
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• 제49권11호
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• pp.923-930
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• 2016

본 연구에서는 2층 누수대수층-하천 시스템에 관한 Hunt (2009)의 해석해를 이용하여 천부대수층 지하수 양수가 하천수량에 미치는 영향을 분석하였다. 대수층 및 하상의 수리특성 조건에 따라 총 2,187가지 경우의 수에 대해서 양수량 대비 하천수 감소량을 산정한 결과 하천고갈인자가 1,000-10,000 보다 큰 경우에 비교적 작은 값을 나타내었으며, 하천바닥층 수리전도도보다는 1, 2층간 반대수층의 수리전도도 크기에 상대적으로 민감한 반응을 보였다. 또한, Hunt (1999)의 해석해로 산정한 하천수 감소비에 비해 최대 0.3을 넘는 차이가 발생하는 등 1층의 하천고갈인자가 큰 경우에는 2층의 수리특성치에 큰 영향을 받는 것으로 분석되었다. 실제로 충주시에 위치한 임의의 천부지하수 관정에 적용하여 양수 경과시간에 따른 하천수 감소비를 산정한 결과 수일 내로 0.8을 초과하여 하천수에 미치는 영향이 단기간에 크게 발생하였으며, 또한 누수계수가 작고 천부대수층의 수리확산계수가 큰 지역에서는 하천-관정 이격거리가 하천수 감소량 크기를 결정하는데 지배적인 인자인 것으로 분석되었다.

• 센서학회지
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• 제8권5호
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• pp.421-426
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• 1999

본 논문에서는 반절연성 GaAs(semi-insulating GaAs) 기판위에 $Al_2O_3$ 절연막이 게이트 절연막으로 이용된 공핍형모드 p-채널 GaAs MOSFET (depletion mode p-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 $1\;{\mu}m$의 GaAs 버퍼층(buffer layer), $4000\;{\AA}$의 p형 GaAs 에피층(epi-layer), $500\;{\AA}$의 AlAs층, 그리고 $50\;{\AA}$의 캡층(cap layer)을 차례로 성장시키고 습식열산화시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 산화되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정을 통하여 AlAs/GaAs epilayer/S I GaAs 구조의 습식열산화는 공핍형 모드 p-채널 GaAs MOSFET를 구현하기에 적합함을 알 수 있다.

• 한국재료학회지
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• 제26권6호
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• pp.342-346
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• 2016

To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at $200^{\circ}C$ came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over $200^{\circ}C$ promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.