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Current Voltage Characteristic of ZTO Thin Film by Negative Resistance  

Oh, Teresa (Division of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.18, no.2, 2019 , pp. 29-31 More about this Journal
Abstract
The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.
Keywords
Depletion Layer; ZTO; Tunneling; Negative Resistance; Barrier Potential;
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Times Cited By KSCI : 3  (Citation Analysis)
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