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Stability of Gas Response Characteristics of IGZO  

Oh, Teresa (Division of Semiconductor, Choenju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.3, 2018 , pp. 17-20 More about this Journal
Abstract
IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.
Keywords
Hall measurement; IGZO; Depletion layer; Recombination;
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