• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.636-639
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• 1993

This paper is discribed the results of insulation characteristic tests that are DC leakage current, test, tan${\delta}$ test, AC breakdown test and observation of tree in the used 6.6kV CV cables. In the correlation of these tests, the tan${\delta}$ test stands for the main deterioration factor of cable insulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.209.2-209.2
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• 2013

We proposed and fabricated zinc oxide thin-film transistors (TFTs) employing 4-mercaptophenol (4MP) doped ZnO by atomic layer deposition (ALD) that results in highly stable and high performance. The 4MP concentration in ZnO films were varied from 1.7% to 5.6% by controlling Zn:4MP pulses. The n-type carrier concentrations in ZnO thin films were controlled from $1.017{\times}10^{20}/cm^3$ to $2.903{\times}10^{17}/cm^3$ with appropriate amount of 4MP doping. The 4.8% 4MP doped ZnO TFT revealed good device mobility performance of 8.4 $cm^2/Vs$ and the on/off current ratio of 106. Such 4MP doped ZnO TFTs exhibited relatively good stability (${\Delta}V_{th}$: 2.4 V) under positive bias-temperature stress while the TFTs with only ZnO showed a 4.3 ${\Delta}V_{th}$ shift, respectively.

• Journal of the Korean Mathematical Society
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• v.56 no.4
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• pp.857-867
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• 2019

Suppose that G = (V, E) is a connected locally finite graph with the vertex set V and the edge set E. Let ${\Omega}{\subset}V$ be a bounded domain. Consider the following quasilinear elliptic equation on graph G $$\{-{\Delta}_{pu}={\lambda}K(x){\mid}u{\mid}^{p-2}u+f(x,u),\;x{\in}{\Omega}^{\circ},\\u=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}^{\circ}$ and ${\partial}{\Omega}$ denote the interior and the boundary of ${\Omega}$, respectively, ${\Delta}_p$ is the discrete p-Laplacian, K(x) is a given function which may change sign, ${\lambda}$ is the eigenvalue parameter and f(x, u) has exponential growth. We prove the existence and monotonicity of the principal eigenvalue of the corresponding eigenvalue problem. Furthermore, we also obtain the existence of a positive solution by using variational methods.

• Journal of the Korean Mathematical Society
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• v.59 no.5
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• pp.911-926
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• 2022

Let u be a function on a locally finite graph G = (V, E) and Ω be a bounded subset of V. Let 𝜀 > 0, p > 2 and 0 ≤ λ < λ₁(Ω) be constants, where λ₁(Ω) is the first eigenvalue of the discrete Laplacian, and h : V → ℝ be a function satisfying h ≥ 0 and $h{\not\equiv}0$. We consider a perturbed Yamabe equation, say $$\{\begin{array}{lll}-{\Delta}u-{\lambda}u={\mid}u{\mid}^{p-2}u+{\varepsilon}h,&&\text{ in }{\Omega},\\u=0,&&\text{ on }{\partial}{\Omega},\end{array}$$ where Ω and ∂Ω denote the interior and the boundary of Ω, respectively. Using variational methods, we prove that there exists some positive constant 𝜀₀ > 0 such that for all 𝜀 ∈ (0, 𝜀₀), the above equation has two distinct solutions. Moreover, we consider a more general nonlinear equation $$\{\begin{array}{lll}-{\Delta}u=f(u)+{\varepsilon}h,&&\text{ in }{\Omega},\\u=0,&&\text{ on }{\partial}{\Omega},\end{array}$$ and prove similar result for certain nonlinear term f(u).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.6
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• pp.2465-2471
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• 2012

For the steel structures those are used in harsh sea environments, corrosion fatigue is a challenging issue in connection with design life. In this research, in order to investigate the influence of cathodic overprotection on the corrosion fatigue crack propagation behavior, corrosion fatigue crack propagation test under the condition of -950mV vs SCE was conducted by using of high tensile TMCP steel plate and the relationships between da/dN-${\Delta}K$ were obtained. At this test, when ${\Delta}K$ is low, the crack propagation rates were accelerated compared to those of seawater condition, however, when ${\Delta}K$ is high, the crack propagation rates were lower than those of seawater condition. As the cause for the acceleration and deceleration of corrosion fatigue crack propagation rates under the condition of cathodic overprotection, the role of hydrogen and calcareous deposits are discussed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.65-73
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• 2007

This paper presents a low power CMOS continuous-time $\Sigma\Delta$ (sigma-delta) modulator for UMTS receivers. The loop filter of the continuous-time $\Sigma\Delta$ modulator consists of an active-RC filter which performs high linearity characteristics and has a simple tuning circuit for low power operating system The architecture of this modulator is the $3^{rd}-order$ 4-bit single loop configuration with a 24 of OSR (Oversampling Ratio) to increase the power efficiency. The modulator includes a half delay feedback path to compensate the excess loop delay. The experimental results of the modulator are 71dB, 65dB and 74dB of the peak SNR, peak SMR and dynamic range, respectively. The continuous-time $\Sigma\Delta$ modulator is fabricated in a 0.18-um 1P4M CMOS standard process and dissipates 15mW for a single supply voltage of 1.8V.

• Proceedings of the KSME Conference
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• 2000.11a
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• pp.105-110
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• 2000

The Micromechanics test is new test method which uses comparatively smaller specimen than that required in conventional material tests. There are several methods, such as small-specimen creep test, the continuous indentation test, and small punch(SP) test. Among them, the small punch(SP) test method has been applied to many evaluation fields, such as a ductile-brittle transition temperature, stress corrosion cracking, hydrogen embrittlement, and fracture properties of advanced materials like FGM or MMC. In this study, the small punch(SP) test is performed to evaluate the mechanical properties at high/low temperature from $-196^{\circ}C$ to $650^{\circ}C$ and the material degradation for virgin and aged materials of 9Cr1MoVNb steel which has been recently developed. The ${\Delta}P/{\Delta}{\delta}$ parameter defined a slope in plastic membrane stretching region of SP load-displacement curve decreases according to the increase of specimen temperature, and that of aged materials is higher than the virgin material in all test temperatures. And the material degradation degrees of aged materials with $630^{\circ}C$ -500hrs and $630^{\circ}C$ -1000hrs are $36^{\circ}C$ and $38^{\circ}C$ respectively. These behaviors are good consistent with the results of hardness($H_v$) and maximum displacement(${\delta}_{max}$).

• The Korean Journal of Physiology
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• v.19 no.2
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• pp.227-232
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• 1985

Previously, we had reported that the electrical stimulation of peripheral nerve with stimlatory parameters of 20 V strength and 2 Hz frequency for 60 min resulted in reducing the pain reaction. The present study was performed to evaluate if the pain reaction was affected by the peripheral nerve stimulation with different stimulatory parameters in the decerebrated cat. The flexion reflex was used as an index of the pain reaction. The reflex was elicited by stimulating the sural nerve (stimulus strength of 20 $V\;\times\;0.5$msec) and recorded as a compound action potential from the motor nerve innervated to the posterior biceps femoris muscle. The common perneal nerve was selected as a peripheral nerve on which the electrical stimulation of various intensities and frequencies was applied. The results are summarized as follows : 1) The peripheral nerve stimulation with 100 mV strength, regardless of frequencies, did not affect the pain reaction induced by the sural nerve stimulation. 2) When the stimulus of 1V intensity and slow frequency (2 Hz) was applied to the peripheral nerve for 30 min or 60 min, the pain reaction was significantly reduced comparing to the control. However, this reduced pain reaction by the peripheral nerve stimulation was not reversed by the injection of naloxone (0.02 mg/kg) 3) High frequency stimulus (60 Hz) of 1V intensity for 30 or 60 min did not show any effects of affecting the pain reaction. These results suggest that the stimulus of relatively high intensity (at least 1V) and low frequency (2 Hz) is needed to elicite the analgesic effect by the peripheral nerve stimulation. By the 1V stimulus, $A\delta$ nerve fiber is activated. Therefore, an $A\delta$ or smaller nerve fibers must be activated for showing analgesia by the peripheral nerve stimulation. However, the mechanism of analgesia by the $A\delta$ nerve activation alone was not related to the endogeneous morphine system since the reduced pain reaction by the $A\delta$ fiber activation alone was not reversed by the treatment of naloxone.

• Molecules and Cells
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• v.38 no.12
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• pp.1054-1063
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• 2015

Mitochondria play a crucial role in eukaryotic cells; the mitochondrial electron transport chain (ETC) generates adenosine triphosphate (ATP), which serves as an energy source for numerous critical cellular activities. However, the ETC also generates deleterious reactive oxygen species (ROS) as a natural byproduct of oxidative phosphorylation. ROS are considered the major cause of aging because they damage proteins, lipids, and DNA by oxidation. We analyzed the chronological life span, growth phenotype, mitochondrial membrane potential (MMP), and intracellular ATP and mitochondrial superoxide levels of 33 single ETC component-deleted strains during the chronological aging process. Among the ETC mutant strains, 14 ($sdh1{\Delta}$, $sdh2{\Delta}$, $sdh4{\Delta}$, $cor1{\Delta}$, $cyt1{\Delta}$, $qcr7{\Delta}$, $qcr8{\Delta}$, $rip1{\Delta}$, $cox6{\Delta}$, $cox7{\Delta}$, $cox9{\Delta}$, $atp4{\Delta}$, $atp7{\Delta}$, and $atp17{\Delta}$) showed a significantly shorter life span. The deleted genes encode important elements of the ETC components succinate dehydrogenase (complex II) and cytochrome c oxidase (complex IV), and some of the deletions lead to structural instability of the membrane-$F_1F_0$-ATP synthase due to mutations in the stator stalk (complex V). These short-lived strains generated higher superoxide levels and produced lower ATP levels without alteration of MMP. In summary, ETC mutations decreased the life span of yeast due to impaired mitochondrial efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.199-202
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• 2014

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was $3.1{\times}10^{10}$ $n/cm^2$. The current density after irradiation decreased from 12.7 to 0.75 $A/cm^2$. Also, a slight positive shift (${\Delta}V_{th}$= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (${\Delta}{\Phi}_B$= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.