• Title/Summary/Keyword: cylindrical drain

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Evaluation on Drainage Capacity of Cylindrical Drain with Different Core Shapes (코아형식에 따른 원통형 배수재의 구멍막힘에 의한 배수능력 평가비교)

  • Lee Kwang-Yeol;Nugroho David Setiawan;Yun Sung-Tae;Ji Ho-Yeol
    • Proceedings of the Korean Geotechical Society Conference
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    • 2006.03a
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    • pp.311-315
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    • 2006
  • Various core shapes of cylindrical drains are used for accelerating primary consolidation for soft clay deposits, but serious harmful disadvantages on drainage capacity may occur on cylindrical drains due to confining Pressure when they are installed in that soil. In this study, two different core shapes of cylindrical drain are used to evaluate the drainage capacity with consideration of clogging effects on their filter jackets for an applied confining pressure. Column tests with radial drainage system were conducted under confining pressure of 50 kPa for 13 days. Two parameters which are discharge and accumulated volume of water drained were measured as the time elapsing. From this experimental study, the results showed that at the Initial stage before the clogging developed enough, the cylindrical drain with angular-type-plastic-core could produce discharge twice higher (maximum) than those with round-type. After 13 days had passed on, cylindrical drain with angular-type-plastic-core could produce discharge only 20% higher than those with round-type one. Eventually, there is a possibility that the efficiency of using angular-type-cylindrical-drain will be similar to the round-type one as the clogging develops more.

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The Calculation Method of the Breakdown Voltage for the Drain Region with the Cylindrical Structure in LDMOS (Cylindrical 구조를 갖는 LDMOS의 Drain 역방향 항복전압의 계산 방법)

  • Lee, Un Gu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.12
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    • pp.1872-1876
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    • 2012
  • A calculation method of the breakdown voltage for the drain region with the cylindrical structure in LDMOS is proposed. The depletion region of the drain is divided into many smaller regions and the doping concentration of each split region is assumed to be uniformly distributed. The field and potential in each split region is calculated by the integration of the Poisson equation and the ionization integral method is used to compute the breakdown voltage. The breakdown voltage resulted from the proposed method shows the maximum relative error of 2.2% compared with the result of the 2-dimensional device simulation using BANDIS.

Capacity Evaluation of Cylindrical Plastic Board Drain with The Composite Discharge Capacity Apparatus (복합통수능시험기를 이용한 실린더형 플라스틱 보드 드레인의 성능 평가)

  • Lee, Chan-Woo;Jung, Du-Hwoe;Kim, Yun-Tae;Jin, Kyu-Nam
    • Proceedings of the Korean Geotechical Society Conference
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    • 2008.03a
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    • pp.293-299
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    • 2008
  • If a conventional type of Plastic Board Drain (PBD) is installed to the deep clay deposit, it is subjected to a high lateral earth pressure. a flow channel of PBD may be reduced by the collapse of cores and clogged by the intrusion of filter into the space between cores which are made by lateral pressure. It could decrease the ability of initial discharge capacity and the reliability of long term discharge capacity. A cylindrical plastic board drain (C-PBD) considered in this study consists of cylindrical core and several supports so that it can prevent the reduction of area of flow channel from the higher lateral earth pressure effectively. The discharge capacity of C-PBD was compared to that of a conventional PBD through performing experiments using the composite discharge capacity apparatus which can consider in-situ condition such as penetration of drains, ground settlement and discharge capacity. As a result, C-PBD showed much better performance than PBD in the ability of discharge. It was observed that the C-PBD was folded whereas the conventional PBD was folded after the experiment.

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Numerical Study on Draining from Cylindrical Tank Using Stepped Drain Port (계단형 배수구를 가진 원통 용기에서의 배수 과정에 관한 수치해석 연구)

  • Son, Jong Hyeon;Park, Il Seouk
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.38 no.12
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    • pp.1043-1050
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    • 2014
  • An air-core vortex is generated during draining after stirring a rotating cylindrical tank or after filling it with water. The formation of the air-core vortex and the time of its formation are dependent on drain conditions such as the dimensions of the tank, the initial rotation or stirring speed, and the shape of the drain port. In this study, a draining process using a two-stage drain port was numerically investigated. The length and radius of the first drain stage located in the lower part of the drain port were kept constant, whereas the radius of the second drain stage was varied for simulating the draining process. The simulation was conducted by considering an axisymmetric swirling flow for all cases. The declining water level was monitored by an interface capturing method. Further, the effects of the radius of the second drain stage on the time of formation of the air-core vortex and the internal flow structure were investigated.

Analytical Model for Deriving the I-V Characteristics of an Intrinsic Cylindrical Surrounding Gate MOSFET (Intrinsic Cylindrical/Surrounding Gate SOI MOSFET의 I-V 특성 도출을 위한 해석적 모델)

  • Woo, Sang-Su;Lee, Jae-Bin;Suh, Chung-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.10
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    • pp.54-61
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    • 2011
  • In this paper, a simple analytical model for deriving the I-V characteristics of a cylindrical surrounding gate SOI MOSFET with intrinsic silicon core is suggested. The Poisson equation in the intrinsic silicon core and the Laplace equation in the gate oxide layer are solved analytically. The surface potentials at both source and drain ends are obtained by means of the bisection method. From them, the surface potential distribution is used to describe the I-V characteristics in a closed-form. Simulation results seem to show the dependencies of the I-V characteristics on the various device parameters and applied bias voltages within a range of satisfactory accuracy.

Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

  • Suh, Chung-Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.2
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    • pp.111-120
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    • 2011
  • A two-dimensional analytical model for deriving the threshold voltage of a short channel fully depleted (FD) cylindrical/surrounding gate MOSFET (CGT/SGT) is suggested. By taking into account the lateral variation of the surface potential, introducing the natural length expression, and using the Bessel functions of the first and the second kinds of order zero, we can derive potentials in the gate oxide layer and the silicon core fully two-dimensionally. Making use of these potentials, the minimum surface potential can be obtained to derive the threshold voltage as a closed-form expression in terms of various device parameters and applied voltages. Obtained results can be used to explain the drain-induced threshold voltage roll-off of a CGT/SGT in a unified manner.

Analytical Threshold Voltage Modeling of Surrounding Gate Silicon Nanowire Transistors with Different Geometries

  • Pandian, M. Karthigai;Balamurugan, N.B.
    • Journal of Electrical Engineering and Technology
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    • v.9 no.6
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    • pp.2079-2088
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    • 2014
  • In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

A Study on the Drainage Effects of Gravel Drain by Laboratory Model Test (실내모형시험을 통한 Gravel Drain의 배수효과에 관한 연구)

  • 천병식;김백영;고용일;여유현;박경원
    • Proceedings of the Korean Geotechical Society Conference
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    • 1999.10a
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    • pp.87-94
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    • 1999
  • Sand drain as a vertical drainage is widely used in soft ground improvement. Recently, sand, the principal source of sand drain, is running out. A laboratory model test was carried out to utilize gravel as a substitute for sand. Though which the characteristics of gravel are compared to those of sand for engineering purpose. Two cylindrical containers for the model test were filled with marine clayey soil from the west coast of Korea with a column in the center, one with sand, the other with gravel. Vibrating wire type piezometers were installed at the distance of 1.0D, 1.5D and 2.0D from the center of the column. D is the diameter of the column. The transient process of pore water pressure with loading and the characteristics of consolidation were studied with the data gained from the measuring instrument place on the surface of the container. The parameter study was performed for the marine clayey soil before and after the test in order to check the effectiveness of the improvement. The clogging effect was checked at various depth in gravel column after the test. According to the test, the settlement was found to be smaller in gravel drain than in sand drain. The increase in bearing capacity by gravel pile explains the result. The clogging effect was not found in gravel column. As a result, it is assumed that gravel is relatively acceptable as a drainage material.

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SPICE Model of Drain Induced Barrier Lowering in Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFET (무접합 원통형 MOSFET에 대한 드레인 유도 장벽 감소의 SPICE 모델)

  • Jung, Hak Kee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.278-282
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    • 2018
  • We propose a SPICE model of drain-induced barrier lowering (DIBL) for a junctionless cylindrical surrounding gate (JLCSG) MOSFETs. To this end, the potential distribution in the channel is obtained via the Poisson equation, and the threshold voltage model is presented for the JLCSG MOSFET. In a JLCSG nano-structured MOSFET, a channel radius affects the carrier transfer as well as the channel length and oxide thickness; therefore, DIBL should be expressed as a function of channel length, channel radius, and oxide thickness. Consequently, it can be seen that DIBLs are proportional to the power of -3 for the channel length, 2 for the channel radius, 1 for the thickness of the oxide film, and the constant of proportionality is 18.5 when the SPICE parameter, the static feedback coefficient ${\eta}$, is between 0.2 and 1.0. In particular, as the channel radius and the oxide film thickness increase, the value of ${\eta}$ remains nearly constant.

Flow Characteristics for Vortexing Draining by Vortex Suppressor from Cylindrical Containers (회전 억제 장치에 따른 원통 내 회전 배출 유동특성)

  • Zhang, YingZhe;Park, Chan-Kyu;Sohn, Chang-Hyun
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2006.11a
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    • pp.89-92
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    • 2006
  • In the present study, the flow field of a mesh type suppressor with varying holes at the central portion is studied to investigate drain flow characteristics in a cylindrical tank. Further, an attempt is made to understand the changes in the flow field brought about by the suppressors of different kinds in a circular tank which ultimately prevents vortex formation. For this purpose, flow visualization studies using PIV (Particle Image Velocimetry) to determine the flow patterns in a cylindrical tank with circular cross section without suppressor and with suppressor are carried out after imparting rotation to the liquid in the tank. Results are obtained when there is no draining and with draining. The flow field is visualized both in horizontal and vertical planes.

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