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Analytical Model for Deriving the I-V Characteristics of an Intrinsic Cylindrical Surrounding Gate MOSFET  

Woo, Sang-Su (School of Electronic & Electrical Eng., Hongik Univ.)
Lee, Jae-Bin (School of Electronic & Electrical Eng., Hongik Univ.)
Suh, Chung-Ha (School of Electronic & Electrical Eng., Hongik Univ.)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.10, 2011 , pp. 54-61 More about this Journal
Abstract
In this paper, a simple analytical model for deriving the I-V characteristics of a cylindrical surrounding gate SOI MOSFET with intrinsic silicon core is suggested. The Poisson equation in the intrinsic silicon core and the Laplace equation in the gate oxide layer are solved analytically. The surface potentials at both source and drain ends are obtained by means of the bisection method. From them, the surface potential distribution is used to describe the I-V characteristics in a closed-form. Simulation results seem to show the dependencies of the I-V characteristics on the various device parameters and applied bias voltages within a range of satisfactory accuracy.
Keywords
intrinsic cylindrical/surrounding gate SOI MOSFET; I-V characteristics; drain current saturation;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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