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http://dx.doi.org/10.5370/KIEE.2012.61.12.1872

The Calculation Method of the Breakdown Voltage for the Drain Region with the Cylindrical Structure in LDMOS  

Lee, Un Gu (Dept. Information & Communication, Bucheon Univ.)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.61, no.12, 2012 , pp. 1872-1876 More about this Journal
Abstract
A calculation method of the breakdown voltage for the drain region with the cylindrical structure in LDMOS is proposed. The depletion region of the drain is divided into many smaller regions and the doping concentration of each split region is assumed to be uniformly distributed. The field and potential in each split region is calculated by the integration of the Poisson equation and the ionization integral method is used to compute the breakdown voltage. The breakdown voltage resulted from the proposed method shows the maximum relative error of 2.2% compared with the result of the 2-dimensional device simulation using BANDIS.
Keywords
Breakdown voltage; Cylindrical structure; LDMOS; Drain engineering; Poisson equation;
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