• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.160-166
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• 2019

Cerium oxide ($CeO_2$, often called as Ceria) is one of the valuable rare earth oxide materials, which has been widely used for high temperature applications such as solid oxide fuel cells, automotive three-way catalysts and oxygen storage capacity. Considering those application, it is important to improve high redox and thermal stability with high surface morphology because the high surface area of $CeO_2$ could improve the catalytic reactivity at high temperature conditions. Herein we successfully fabricated hierarchical flower-like $CeO_2$ deposited via controlling pathway of precipitation reaction to supply carbonate ion lead to the flower-like morphology. The hexagonal lattice system of precipitated precursor shows better thermal stability then orthorhombic one during thermal cycling condition.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.363-367
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• 2022

Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and optoelectrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an optoelectrical performance of the films, as deposited films show a figure of merit of 2.0×10^-5 𝛺^-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10^-5 𝛺^-1.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.728-733
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• 2009

Cu based amorphous ($Cu_{54}Zr_{22}Ti_{18}Ni_{6}$) powders were deposited onto Al 6061 substrates by cold spray process with different powder preheating temperatures (below glass transition temperature: $350^{\circ}C$, near glass transition temperature: $430^{\circ}C$ and near crystallization temperature: $500^{\circ}C$). The microstructure and macroscopic properties (hardness, wear and corrosion) of Cu based amorphous coating layers were also investigated. X-ray diffraction results showed that cold sprayed Cu based amorphous coating layers of $300{\sim}350{\mu}m$ thickness could be well manufactured regardless of powder preheating temperature. Porosity measurements revealed that the coating layers of $430^{\circ}C$ and $500^{\circ}C$ preheating temperature conditions had lower porosity contents (0.88%, 0.93%) than that of the $350^{\circ}C$ preheating condition (4.87%). Hardness was measured as 374.8 Hv ($350^{\circ}C$), 436.3 Hv ($430^{\circ}C$) and 455.4 Hv ($500^{\circ}C$) for the Cu based amorphous coating layers, respectively. The results of the suga test for the wear resistance property also corresponded well to the hardness results. The critical anodic current density ($i_{c}$) according to powder preheating temperature conditions of $430^{\circ}C$, $500^{\circ}C$ was lower than that of the sample preheated at $350^{\circ}C$, respectively. The higher hardness, wear and corrosion resistances of the preheating conditions of near $T_{g}$ and $T_{x}$, compared to the properties of below $T_{g}$, could be well explained by the lower porosity of coating layer.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.133-140
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• 2010

10 nm thick Ni layers were deposited on 200 nm $SiO_2/Si$ substrates using an e-beam evaporator. Then, 60 nm or 20 nm thick ${\alpha}$-Si:H layers were grown at low temperature (<$200^{\circ}C$) by a Catalytic-CVD. NiSi layers were already formed instantaneously during Cat-CVD process regardless of the thickness of the $\alpha$-Si. The resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness with the additional rapid thermal annealing up to $500^{\circ}C$ were examined using a four point probe, HRXRD, FE-SEM, TEM, AES, and SPM, respectively. The sheet resistance of the NiSi layer was 12${\Omega}$/□ regardless of the thickness of the ${\alpha}$-Si and kept stable even after the additional annealing process. The thickness of the NiSi layer was 30 nm with excellent uniformity and the surface roughness was maintained under 2 nm after the annealing. Accordingly, our result implies that the low temperature Cat-CVD process with proposed films stack sequence may have more advantages than the conventional CVD process for nano scale NiSi applications.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.907-911
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• 2012

High purity silicon can be obtained from Al-Si alloys by a combination of solvent refining and centrifugation. Silicon purification by crystallization of silicon from an Al-Si alloy melt was carried out using 2N and 4N purity aluminum and 2N purity silicon as raw materials. The effect of the purity of raw materials on the final silicon ingot purity by centrifugation was investigated for an Al-50 wt% Si alloy. Alloys were melted using an electrical resistance furnace, and then poured into a centrifuging apparatus. A silicon lump like foam was obtained after centrifugation and was leached by an acid in order to get pure silicon flakes. Then silicon flakes were melted to make a silicon ingot using an induction furnace. The purities of the silicon flakes and silicon ingot were enhanced significantly compared to those of the raw materials of silicon and aluminum. The silicon ingot made of 4N aluminum and 2N silicon showed the lowest impurities.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.321-327
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• 2008

Cu based amorphous ($Cu_{54}Zr_{22}Ti_{18}Ni_6$) coating was produced by cold spraying as a new fabrication process. The microstructure and macroscopic properties of amorphous coating layer was investigated and compared with those of cold sprayed pure Cu coating. Amorphous powders were prepared by gas atomization and Al 6061 was used as the substrate plate. X-ray diffraction results showed that Cu based amorphous powder could be successfully deposited by cold spraying without any crystallization. The Cu based amorphous coating layer ($300{\sim}400{\mu}m$ thickness) contained 4.87% porosity. The hardness of Cu based amorphous coating represented $412.8H_v$, which was correspond to 68% of the hardness of injection casted bulk amorphous material. The wear resistance of Cu based amorphous coating was found to be three times higher than that of pure Cu coating. The 3-point bending test results showed that the adhesion strength of Cu based amorphous coating layer was higher than that pure Cu coating. It was also observed that hard Cu base amorphous particle could easily deform soft substrate by particle collisions and thus generated strong adhesion between coating and substrate. However, the amorphous coating layer unexpectedly represented lower corrosion resistance than pure Cu coating, which might be resulted from the higher content of porosity in the cold sprayed amorphous coating.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.61-66
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• 2021

In this study, we studied the alternative of plasma resistant ceramic parts that constitute plasma chambers in the semiconductor dry etching process. MgO-Al₂O₃-SiO₂(MAS) glass was made of 13 types of glass using the Design Of Experiments(DOE) and the effect on thermal properties such as glass transition temperature and crystallization temperature depending on the content of each composition and etching resistance to CF₄/O₂/Ar plasma gas. MAS glass showed excellent plasma resistance and surface roughness up to 20 times higher than quartz glass. As the content of Al₂O₃ and MgO increases, the plasma resistance is improved, and it has been confirmed that it has an inverse relationship with SiO₂.

• Membrane Journal
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• v.31 no.1
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• pp.67-79
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• 2021

Mesoporous polystyrene (PS) and polyethersulfone (PES) membranes have been fabricated by reverse-thermally induced phase separation (RTIPS) process, using flash freezing. The mesoporous pores can be created by the nano-scaled phase separation induced by the formation and growth of solvent crystals in the dope solution in RTIPS process. RTIPS process has been characterized through analysis on the enthalpy change in the solvent of the dope solution, the morphology of the membrane fabricated with different polymer content, and the pore size distribution and its standard deviation of pore size of the membrane with polymer content via DSC, SEM, and BET, respectively. It is found that the kinetic aspect of the dope solution, i.e., the crystallization of solvent is a crucial factor to determine the structure of membrane fabricated in RTIPS rather than the thermodynamic aspect of the dope solution.