Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Property of Nano-thick Silicon Films Fabricated by Low Temperature Inductively Coupled Plasma Chemical Vapor Deposition Process

저온 ICP-CVD 공정으로 제조된 나노급 실리콘 박막의 물성

  • Shen, Yun (Department of Materials Science and Engineering, University of Seoul) ;
  • Sim, Gapseop (Department of Materials Science and Engineering, University of Seoul) ;
  • Choi, Yongyoon (Department of Materials Science and Engineering, University of Seoul) ;
  • Song, Ohsung (Department of Materials Science and Engineering, University of Seoul)
  • 신운 (서울시립대학교 신소재공학과) ;
  • 심갑섭 (서울시립대학교 신소재공학과) ;
  • 최용윤 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과)
  • Received : 2010.10.27
  • Published : 2011.04.25
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Abstract

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

Keywords

Acknowledgement

Supported by : 서울시립대학교

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