1 |
Paul A. Flimm, Donald S. Garder, and William D. Nix, IEEE Trans. elec. dev. ED34, 689 (1987)
|
2 |
E. G. Colgan, J. P. Gambino, and Q. Z. Hong, Mater. Sci. Engin. 16, 43 (1996)
DOI
ScienceOn
|
3 |
S. Yamazaki, Japanese Patent 686, 435, Appl., No. S43-41742 (1968)
|
4 |
H. Matsumura, Jpn. J. Appl. Phys. 25, L949 (1986)
DOI
ScienceOn
|
5 |
A. G. Sault and D. W. Goodman, Surf. Sci. 235, 28 (1990)
DOI
ScienceOn
|
6 |
Crandall, H. M. Branz, Thin Solid Films 395, 292 (2001)
DOI
ScienceOn
|
7 |
J. P. Gambino and E. G. Colgan, Mater. Chem. Phys. 52, 99 (1998)
DOI
ScienceOn
|
8 |
B. P. Nelson, E. Iwaniczko, A. H. Mahan, Q. Wang, Y. Xu, R. S. Crandall, and H. M. Branz, Thin Solid Films 395, 292 (2001)
DOI
ScienceOn
|
9 |
M. Karasawa, M. Sakai, K. Ishibashi, M. Tanaka, A. Masuda, and H. Matsumura, Proc. 21st Int. Display Research Conf. in Conjunction with 8th Int. Display Workshops, p. 1735, Nagoya (2001)
|
10 |
J. J. Jeong, J. Lim, and C. Lee, Coatings Technology 171, 6 (2003)
DOI
|
11 |
C. Lavoie, F. M. d'Heurle, C. Detavernier, and C. Cabral, J. Microelectronic Engin. 70, 144 (2003)
DOI
ScienceOn
|
12 |
N. Ibaraki, Mar. Res. Soc. Proce. 345, 3 (1994)
DOI
|
13 |
S. Yamazaki, K. Wada, and I. Taniguchi, Jpn. J. Appl. Phys. 9 (1970)
|
14 |
S. P. Murarka, Silicide for VLSI Applications, p. 90, Academic Press (1983)
|
15 |
A. Izumi and H. Matsumura, Jpn. J. Appl. Phys. 41 (2002)
|
16 |
M. C. Poon, C. H. Ho, F. Deng, S. S. Lau, and H. Wong, Microelectronics Reliability 38, 1495 (1998)
DOI
ScienceOn
|
17 |
Y. Y. Choi, J. S. Park, and O. S. Song, J. Kor. Inst. Met. & Mater 47, 322 (2009)
|