• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.329-333
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• 2011

To develop wide-band noise absorbers with a special design for low-frequency performance, this study proposes a tin oxide (Sn-O) thin films as the noise absorbing materials in a microstrip line. Sn-O thin films were deposited on polyimide film substrates by reactive sputtering of the Sn target under flowing $O_{2}$ gas, exhibiting a wide variation of surface resistance (in the range of $10^{0}-10^{5}{\Omega}$) depending on the oxygen partial pressure during deposition. The microstrip line with characteristic impedance of $50\Omega$ was used for the measurement of noise absorption by the Sn-O films. The reflection parameter $(S_{11})$ increased with a decrease of surface resistance due to an impedance mismatch at the boundary between the film and the microstrip line. Meanwhile, the transmission parameter $(S_{21})$ diminished with a decrease of surface resistance resulting from an Ohmic loss of the Sn-O films. The maximum noise absorption predicted at an optimum surface resistance of the Sn-O films was about $150{\Omega}$. For this film, greater power absorption is predicted in the lower frequency region (about 70% at 1 GHz) than in conventional magnetic sheets of high magnetic loss, indicating that Ohmic loss is the predominant loss parameter for the conduction noise absorption in the low frequency band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• Progress in Superconductivity and Cryogenics
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• v.12 no.4
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• pp.8-12
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• 2010

The properties of the conductor.mechanical, thermal, and electrical-are the key information in the design and optimization of superconducting coils. Particularly, in devices using second generation (2G) high temperature superconductors (HTS), whose base materials (for example, the substrate or stabilizer) and dimensions are adjustable, a design process for conductor optimization is one of the most important factors to enhance the electrical and thermal performance of the superconducting system while reducing the cost of the conductor. Recently, we developed a numerical program that can be used for 2G HTS conductor optimization. Focusing on the five major properties, viz. the electrical resistivity, heat capacity, thermal conductivity, Z-value, and enthalpy, the program includes an electronic database of the major base materials and calculates the equivalent properties of the 2G HTS conductors using the dimensions of the base materials as the input values. In this study, the developed program is introduced and its validity is verified by comparing the experimental and simulated results obtained with several 2G HTS conductors.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.12-15
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• 2002

The physical properties, including magneto-optical and transport ones, of Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states were investigated. The dependence of the temperature coefficient of resistivity on temperature shows kinks at the structural and ferro-para magnetic transitions. Electron-magnon and electron-phonon scattering are analyzed to be the dominant scattering mechanisms of the Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states, respectively. The experimental real parts of the off-diagonal components of the dielectric function present two sharp peaks, one at 1.9 eV and the other at 3.2 eV, and a broad shoulder at 3.5 eV, all are identified by the band-structure calculations. These peak positions are coincident with those in the corresponding optical-conductivity spectrum, which is thought to originate from the single-spin state in Ni$_2$MnG$_2$ alloy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.8-16
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• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.

• Electronic Materials Letters
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• v.14 no.6
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• pp.689-699
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• 2018

Nanostructured Ni doped $Bi_2S_3$ ($Bi_{2-x}Ni_xS_3$, $0{\leq}x{\leq}0.07$) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of $Bi_2S_3$ was decreased by adding Ni atoms, which shows a minimum value of $2.35{\times}10^{-3}{\Omega}m$ at $300^{\circ}C$ for $Bi_{1.99}Ni_{0.01}S_3$ sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared to a high density $Bi_2S_3$. The thermal conductivity of $Bi_{2-x}Ni_xS_3$ ranges from 0.31 to 0.52 W/m K in the temperature range of $27^{\circ}C$ (RT) to $300^{\circ}C$ with the lowest ${\kappa}$ values of $Bi_2S_3$ compared to the previous works. A maximum ZT value of 0.13 at $300^{\circ}C$ was achieved for $Bi_{1.99}Ni_{0.01}S_3$ sample, which is about 2.6 times higher than (0.05) of $Bi_2S_3$ sample. This work show an optimization pathway to improve thermoelectric performance of $Bi_2S_3$ through Ni doping and introduction of porosity.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.4C
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• pp.231-238
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• 2008

A column testing device capable of measuring the electrical resistivity of soil at 3 different locations was developed to verify applicability of bulk electrical conductivity (BEC) breakthrough curves in monitoring contaminant transport. Tracer injection tests were conducted with three different types of saturated sands to obtain average linear velocities and longitudinal hydrodynamic dispersion coefficients based on BEC breakthrough curves and effluent solute breakthrough curves. Comparative analysis of transport parameters obtained from curve fitting the results into the analytical solutions confirmed the validity of resistance measurements in estimating time-continuous resident solute concentration. Under the assumption that a linear relationship exists between ${\sigma}_{sat}-{\sigma}_w-C$, the BEC breakthrough curves are able to effectively reduce the laborious and time-consuming processes involved in the conventional method of sampling and analysis. In order to reduce possible uncertainties in analyzing the BEC breakthrough curves, it was recommended that resistance measurements take place nearby the effluent boundary. In addition, a sufficient electrical contrast or difference in the electrical conductivity of the influent and the saturating solution is required to conduct reliable analysis.

• Journal of the Korea institute for structural maintenance and inspection
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• v.9 no.3
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• pp.203-212
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• 2005

Cellulose insulation is primarily manufactured from recycled newsprint and treated with fire retardants for the fire resistance. Thanks to the fire retardants, it is not combustible and flammable. In addition to that, Its thermal resistance is much better than that of fiberglass or rock wool. It is made from waste paper and easily decayed when it is demolished, and it has small embodied energy. So it is very environment-friendly building material. For broader use of cellulose insulation in buildings in Korea, it is necessary to test its physical performance to compare the results with the requirements on the Korean Building Code. To this end, apparent thermal conductivity (ka) measurements of Korean-made loose-fill cellulose insulations were recently completed using equipment that was built and operated in accordance with ASTM C 518 and the fire resistance was tested in accordance with ASTM C 1485. Korean loose-fill cellulose has thermal conductivity about 5% greater than the corresponding U.S. product at the same density. This is likely due to differences in the recycled material being used. Both spray-applied and loose-fill cellulose insulation lose about 1.5% of their thermal resistivity for $5.5^{\circ}C$ increase in temperature. The fire resistance of cellulose insulation is increased in linear proportion to the increase of the rate of fire retardant. Thanks to the high fire resistance, cellulose insulation can be used as a substitution of Styrofoam or Urethane foam which is combustible. The thermal conductivity of cellulose insulation was $0.037-0.043W/m{\cdot}K$ at the mean specimen temperature from $4-43^{\circ}C$. It corresponds to the thermal resistance of "Na Grade" according to the Korean Building Code. The effect of chemical content on thermal conductivity was negligible for all but the chemical-free specimen which had the highest value for the thermal conductivity over the temperature range tested. The thermal resistance of cellulose insulation is better than that of fiberglass or rock wool, and its fire resistance is higher than that of Styrofoam or Urethane foam. Therefore it can be substituted for those above considering its physical performance. Cellulose insulation is no more expensive than Styrofoam or rock wool, so it is recommended to use it more widely in Korea.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.19-24
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• 2020

In this work, the electrical property of Si-doped β-Ga2O3 was investigated via a post-growth annealing process. The Ga2O3 samples were annealed under air (O-rich) or N2 (O-deficient) ambient at 800~1,200℃ for 30 mins. There was no correlation between the crystalline quality and the electrical conductivity of the films within the experimental conditions explored in this work. However, it was observed the air ambient led to severe degradation of the film's electrical conductivity while N2-annealed samples exhibited improvement in both the carrier concentration and Hall mobility measured at room temperature. Interestingly, the x-ray photoemission spectroscopy (XPS) revealed that both annealing conditions resulted in higher concentration of oxygen vacancy (VO). Although it was a slight increase for the air-annealed sample, high resistivity of the film strongly suggests that VO cannot be a shallow donor in β-Ga2O3. Therefore, the enhancement of the electrical conductivity of N2-annealed samples must be originated from something other than VO. One possibility is the activation of Si. The XPS analysis of N2-annealed samples showed increasing relative peak area of Si 2p associated with SiOx with increasing annealing temperature from 800 to 1,200℃. However, it was unclear whether or not this SiOx was responsible for the improvement as the electrical conductivity quickly degraded above 1,000℃ even under N2 ambient. Furthermore, XPS suggested the concentration of Si actually increased near the surface as opposed to the shift of the binding energy of Si from its initial chemical state to SiOx state. This study illustrates the electrical changes induced by a post-growth thermal annealing process can be utilized to probe the chemical and electrical states of vacancies and dopants for better understanding of the electrical property of Si-doped β-Ga2O3.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.