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A Study on the Properties of Al doped ZnO (AZO) Thin Films Deposited by RF Magnetron Sputtering  

Yun, Eui-Jung (Department of System Control Engineering, Hoseo University)
Jung, Myung-Hee (Department of Digital Media, Anyang University)
Park, Nho-Kyung (Department of Information & Comm. Engineering, Hoseo University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.7, 2010 , pp. 8-16 More about this Journal
Abstract
In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.
Keywords
AZO thin films; photoluminescence; Hall measurements; RF magnetron sputtering; $O_2$ fraction;
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