• Title/Summary/Keyword: clock generator

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CCC-NSG : A Security Enhancement of the Bluetooth $E_0$Cipher using a Circular-Clock-Controlled Nonlinear Algorithm (CCC-NSG : 순환 클럭 조절된 비선형 알고리즘을 이용한 블루투스 $E_0$암호화시스템의 안전성 개선)

  • Kim, Hyeong-Rag;Lee, Hoon-Jae;Moon, Sang-Jae
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.34 no.7C
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    • pp.640-648
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    • 2009
  • Summation generator with high period and high linear complexity can be easily implemented by a simple hardware or software and it is proper to apply in mobile security system for ubiquitous environments. However the generator has been some weaknesses from Dawson's divided-and-conquer attack, Golic's correlation attack and Meier's fast correlation attack. In this paper, we propose an improved version($2^{128}$security level) of $E_0$algorithm, CVC-NSG(Circular-Clock-Controlled - Nonlinear Summation Generator), which partially replaces LFSRs with nonlinear FSRs and controls the irregular clock to reinforce it's own weaknesses. Finally, we analyze our proposed design in terms of security and performance.

A Wide Frequency Range LLC Resonant Controller IC with a Phase-Domain Resonance Deviation Prevention Circuit for LED Backlight Units

  • Park, YoungJun;Kim, Hongjin;Chun, Joo-Young;Lee, JooYoung;Pu, YoungGun;Lee, Kang-Yoon
    • Journal of Power Electronics
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    • v.15 no.4
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    • pp.861-875
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    • 2015
  • This paper presents a wide frequency range LLC resonant controller IC for LED backlight units. In this paper a new phase-domain resonance deviation prevention circuit (RDPC), which covers a wide frequency and input voltage range, is proposed. In addition, a wide range gate clock generator and an automatic dead time generator are proposed. The chip is fabricated using 0.35 μm BCD technology. The die size is 2 x 2 mm2. The frequency of the clock generator ranges from 38 kHz to 400 kHz, and the dead time ranges from 300 ns to 2 μs. The current consumption of the LLC resonant controller IC is 4 mA for a 100 kHz operation frequency using a supply voltage of 15 V.

Design of a Multiphase Clock Generator for High Speed Serial Link (고속 시리얼 링크를 위한 다중 위상 클럭 발생기의 설계)

  • 조경선;김수원
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.277-280
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    • 2001
  • The proposed clock generator lowers the operating frequency in a system core though it keeps data bandwidth high because it has a multiphase clocking architecture. Moreover. it has a dual loop which is comprised of an inner analog phase generation loop and outer digital phase control loop. It has both advantages of DLL's wide operating range and DLL's low jitter The proposed design has been demonstrated in terms of the concept and Hspice simulation. All circuits were designed using a 0.25${\mu}{\textrm}{m}$ CMOS process and simulated with 2.5 V power supply.

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A Jitter Suppressed DLL-Based Clock Generator (지연 고정 루프 기반의 지터 억제 클록 발생기)

  • Choi, Young-Shig;Ko, Gi-Yeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.7
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    • pp.1261-1266
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    • 2017
  • A random and systematic jitter suppressed delay locked loop (DLL)-based clock generator with a delay-time voltage variance converter (DVVC) and an averaging circuit (AC) is presented. The DVVC senses the delay variance of each delay stage and generates a voltage. The AC averages the output voltages of two consecutive DVVCs to suppress the systematic and random delay variance of each delay stage in the VCDL. The DVVC and AC averages the delay time of successive delay stages and equalizes the delay time of all delay stages. In addition, a capacitor with a switch working effectively as a negative feedback function is introduced to reduce the variation of the loop filter output voltage. Measurement results of the DLL-based clock generator fabricated in a one-poly six-metal $0.18{\mu}m$ CMOS process shows 13.4-ps rms jitter.

An Electrical Repair Circuit for Yield Increment of High Density Memory (고집적 메모리의 yield 개선을 위한 전기적 구제회로)

  • 김필중;김종빈
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.4
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    • pp.273-279
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    • 2000
  • Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.

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A Single-Chip CMOS Digitally Synthesized 0-35 MHz Agile Function Generator

  • Meenakarn, C.;Thanachayanont, A.
    • Proceedings of the IEEK Conference
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    • 2002.07c
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    • pp.1984-1987
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    • 2002
  • This paper describes the design and implementation of a single-chip digitally synthesized 0-35MHz agile function generator. The chip comprises an integrated direct digital synthesizer (DDS) with a 10-bit on- chip digital-to-analog converter (DAC) using an n-well single-poly triple-metal 0.5-$\mu\textrm{m}$ CMOS technology. The main features of the chip include maximum clock frequency of 100 MHz at 3.3-V supply voltage, 32-bit frequency tuning word resolution, 12-bit phase tuning word resolution, and an on-chip 10-bit DAC. The chip provides sinusoidal, ramp, saw-tooth, and random waveforms with phase and frequency modulation, and power-down function. At 100-MHz clock frequency, the chip covers a bandwidth from dc to 35 MHz in 0.0233-Hz frequency steps with 190-ns frequency switching speed. The complete chip occupies 12-mm$^2$die area and dissipates 0.4 W at 100-MHz clock frequency.

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A Low EMI Spread Spectrum Clock Generator Using TIE-Limited Frequency Modulation Technique (TIE 제한 주파수 변조 기법을 이용한 낮은 EMI 분산 스펙트럼 클록 발생기)

  • Piao, Taiming;Wee, Jae-Kyung;Lee, Seongsoo
    • Journal of IKEEE
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    • v.17 no.4
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    • pp.537-543
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    • 2013
  • This paper proposed a low EMI spread spectrum clock generator (SSCG) using discontinuous frequency modulation technique. The proposed SSCG is designed for triangular frequency modulation with high modulation depth. When the maximum time interval error (MTIE) of the SSCG is higher than given limit, the output frequency of SSCG is divided by two and used for reducing the time interval error (TIE). This discontinuous frequency modulation technique can effectively reduce the EMI within given limit. The simulated EMI of proposed SSCG was reduced by 18.5dB than that of conventional methods.

High accuracy, Low Power Spread Spectrum Clock Generator to Reduce EMI for Automotive Applications

  • Lee, Dongsoo;Choi, Jinwook;Oh, Seongjin;Kim, SangYun;Lee, Kang-Yoon
    • IEIE Transactions on Smart Processing and Computing
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    • v.3 no.6
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    • pp.404-409
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    • 2014
  • This paper presents a Spread Spectrum Clock Generator (SSCG) based on Relaxation oscillator using Up/Down Counter. The current is controlled by a counter and the spread spectrum of the Relaxation Oscillator. A Relaxation Oscillator with temperature compensation using the BGR and ADC is presented. The current to determine the frequency of the Relaxation Oscillator can be controlled. The output frequency of the temperature can be compensated by adjusting the current according to the temperature using the code that is the output from the ADC and BGR. EMI Reduction of SSCG is 11 dB, and Spread down frequency is 150 kHz. The current consumption is $600{\mu}A$ from 5V and the operating frequency is from 2.3 MHz to 5.75 MHz. The rate of change of the output frequency with temperature was approximately ${\pm}1%$. The SSCG is fabricated in a 0.35um CMOS process with active area $250um{\times}440um$.

A High Efficiency Controller IC for LLC Resonant Converter in 0.35 μm BCD

  • Hong, Seong-Wha;Kim, Hong-Jin;Park, Hyung-Gu;Park, Joon-Sung;Pu, Young-Gun;Lee, Kang-Yoon
    • Journal of Power Electronics
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    • v.11 no.3
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    • pp.271-278
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    • 2011
  • This paper presents a LLC resonant controller IC for secondary side control without external active devices to achieve low profile and low cost LED back light units. A gate driving transformer is adopted to isolate the primary side and the secondary side instead of an opto-coupler. A new integrated dimming circuitry is proposed to improve the dynamic current control characteristic and the current density of a LED for the brightness modulation of a large screen LCD. A dual-slope clock generator is proposed to overcome the frequency error due to the under shoot in conventional approaches. This chip is fabricated using 0.35 ${\mu}m$ BCD technology and the die size is $2{\times}2\;mm^2$. The frequency range of the clock generator is from 50 kHz to 500 kHz and the range of the dead time is from 50 ns to 2.2 ${\mu}s$. The efficiency of the LED driving circuit is 97 % and the current consumption is 40 mA for a 100 kHz operation frequency from a 15 V supply voltage.

A Band-Selective CPPLL for Fast Acquisition time (빠른 Acquisition 시간을 위한 Band-Selective CPPLL)

  • 류상하;김재완;김수원
    • Proceedings of the IEEK Conference
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    • 2000.06e
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    • pp.85-88
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    • 2000
  • This paper describes a Band-Selective Charge-Pump PLL(CPPLL) for clock recovery and clock generator. The proposed PLL satisfies fast acquisition time and low jitter characteristics simultaneously by reducing initial frequency error. The acquisition time of the designed Band-Selective CPPLL can be decreased down to 55% of a conventional CPPLL.

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