• 제목/요약/키워드: channel barrier

검색결과 214건 처리시간 0.022초

Rat Peripheral Nerve Regeneration Using Nerve Guidance Channel by Porcine Small Intestinal Submucosa

  • Yi, Jin-Seok;Lee, Hyung-Jin;Lee, Hong-Jae;Lee, Il-Woo;Yang, Ji-Ho
    • Journal of Korean Neurosurgical Society
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    • 제53권2호
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    • pp.65-71
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    • 2013
  • Objective : In order to develop a novel nerve guidance channel using porcine small intestinal submucosa (SIS) for nerve regeneration, we investigated the possibility of SIS, a tissue consisting of acellular collagen material without cellular immunogenicity, and containing many kinds of growth factors, as a natural material with a new bioactive functionality. Methods : Left sciatic nerves were cut 5 mm in length, in 14 Sprague-Dawley rats. Grafts between the cut nerve ends were performed with a silicone tube (Silicon group, n=7) and rolled porcine SIS (SIS group, n=7). All rats underwent a motor function test and an electromyography (EMG) study on 4 and 10 weeks after grafting. After last EMG studies, the grafts, including proximal and distal nerve segments, were retrieved for histological analysis. Results : Foot ulcers, due to hypesthesia, were fewer in SIS group than in Silicon group. The run time tests for motor function study were 2.67 seconds in Silicon group and 5.92 seconds in SIS group. Rats in SIS group showed a better EMG response for distal motor latency and amplitude than in Silicon group. Histologically, all grafts contained some axons and myelination. However, the number of axons and the degree of myelination were significantly higher in SIS group than Silicon group. Conclusion : These results show that the porcine SIS was an excellent option as a natural biomaterial for peripheral nerve regeneration since this material contains many kinds of nerve growth factors. Furthermore, it could be used as a biocompatible barrier covering neural tissue.

실리콘 선택적 결정 성장 공정을 이용한 Elevated Source/drain물 갖는 NMOSFETs 소자의 특성 연구 (A Study on the Device Characteristics of NMOSFETs Having Elevated Source/drain Made by Selective Epitaxial Growth(SEG) of Silicon)

  • 김영신;이기암;박정호
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권3호
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    • pp.134-140
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    • 2002
  • Deep submicron NMOSFETs with elevated source/drain can be fabricated using self-aligned selective epitaxial growth(SEG) of silicon for enhanced device characteristics with shallow junction compared to conventional MOSFETs. Shallow junctions, especially with the heartily-doped S/D residing in the elevated layer, give hotter immunity to Yt roll off, drain-induced-barrier-lowering (DIBL), subthreshold swing (SS), punch-through, and hot carrier effects. In this paper, the characteristics of both deep submicron elevated source/drain NMOSFETs and conventional NMOSFETs were investigated by using TSUPREM-4 and MEDICI simulators, and then the results were compared. It was observed from the simulation results that deep submicron elevated S/D NMOSFETs having shallower junction depth resulted in reduced short channel effects, such as DIBL, SS, and hot carrier effects than conventional NMOSFETs. The saturation current, Idsat, of the elevated S/D NMOSFETs was higher than conventional NMOSFETs with identical device dimensions due to smaller sheet resistance in source/drain regions. However, the gate-to-drain capacitance increased in the elevated S/D MOSFETs compared with the conventional NMOSFETs because of increasing overlap area. Therefore, it is concluded that elevated S/D MOSFETs may result in better device characteristics including current drivability than conventional NMOSFETs, but there exists trade-off between device characteristics and fate-to-drain capacitance.

Percolation Approach to the Morphology of Rigid-Flexible Block Copolymer on Gas Permeability

  • 박호범;하성룡;이영무
    • 한국막학회:학술대회논문집
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    • 한국막학회 1997년도 추계 총회 및 학술발표회
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    • pp.69-70
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    • 1997
  • Polyimides and related polymers, when synthesized from aromatic monomers, have generally rigid chain structures resulting in a low gas permeability. The rigidity of polymer chains reduces the segmental motion of chains and works as a good barrier against gas transport. To overcome the limit of use as materials of gas separation membranes due to low gas permeability, block copolymers with the incorporation of flexible segments like siloxane linkage and ether linkage have been studied. These block copolymers have microphase-separated structures composed of microdomains of flexible poly(dimethylsiloxane) or polyether segments and of rigid polyimides segments. In case of rigid-flexible block copolymers, the characteristics of both phases for gas permeation are of great difference. The permeation of gas molecules occurs favorably through microdomains of flexible segments, whereas those of rigid segments hinder the permeation of gas molecules. Accordingly the increase of content of flexible segments in a rigid polymer matrix will increase the gas permeability of the membrane linearly. However, this prediction does not satisfy enough many experimental results and in particular the drastic increase of the permeability is observed in a certain volume fraction. It was proposed that the gas transport mechanism is dominated by diffusion rather than gas solubility in a certain content of flexible phase if solution-diffusion mechanism is adopted. However, the transition from solubility-dependent to diffusion-dependent cannot be explained by the understanding of mechanism itself. Therefore, we consider an effective chemical path which permeable phase can form in a microheterogenous medium, and percolation concept is introduced to describe the permeability transition at near threshold where for the first time a percolation path occurs. The volume fraction of both phases is defined as V$_{\alpha}$ and V$_{\beta}$ in block copolymers, and the volume of $\beta$ phase in the threshold forming geometrically a traversing channel is defined as V$_{\betac}$. The formation mechanism of shortest chemical channel is schematically depicted in Fig. 1.

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황화 암모늄을 이용한 Al2O3/HfO2 다층 게이트 절연막 트랜지스터 전기적 및 계면적 특성 향상 연구 (Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation)

  • 김준규;김대현
    • 센서학회지
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    • 제29권4호
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    • pp.266-269
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    • 2020
  • In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In0.7Ga0.3As QW MOSFETs with and without (NH4)2S treatment and then deposited 1/4 nm of Al2O3/HfO2 through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density Dit (2.83×1012 cm-2eV-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance

  • Kim, Sung-Min;Yoon, Eun-Jung;Kim, Min-Sang;Li, Ming;Oh, Chang-Woo;Lee, Sung-Young;Yeo, Kyoung-Hwan;Kim, Sung-Hwan;Choe, Dong-Uk;Suk, Sung-Dae;Kim, Dong-Won;Park, Dong-Gun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권1호
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    • pp.22-29
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    • 2006
  • We demonstrate highly manufacturable Multi-channel Field Effect Transistor (McFET) on bulk Si wafer. McFET shows excellent transistor characteristics, such as $5{\sim}6 times higher drive current than planar MOSFET, ideal subthreshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency, maintaining the same source/drain resistance as that of a planar transistor due to the unique feature of McFET. And suitable threshold voltage ($V_T$) for SRAM operation and high static noise margin (SNM) are achieved by using TiN metal gate electrode.

낙동강 하구역 진우도와 신자도 전면의 최근 지형 변화: 2007년-2012년 (Recent Morphological Changes off the Shoreface of Jinwoodo and Sinjado in the Nakdong River Estuary: 2007-2012)

  • 박진구;김부근;이희준;이상룡
    • Ocean and Polar Research
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    • 제36권2호
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    • pp.87-101
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    • 2014
  • Recently, more attention has been paid to the geomorphological changes in the Nakdong River Estuary, because those changes are caused by artificial activities including weirs, reclamation and construction. In order to analyze quantitatively the recent geomorphological variability in the Nakdong River Estuary, we surveyed the depth and elevation of submarine topography near Jinwoodo and Sinjado from March 2007 to February 2012. A statistical method (based on Digital Shoreline Analysis System) and an Empirical Orthogonal Functions method were used to evaluate the morphological changes. According to the statistical variables (DCE, NDC, EPR, LRR), the highest amount and rate of accumulation were recorded around the Gadeokdo whereas the greatest amount of erosion appeared around the coast off the eastern part of Sinjado. In particular, a dynamic variation of morphology was clearly observed in the vicinity of the sub-tidal channel located between Jinwoodo and Sinjado, which seems to be attributable to channel migration. As a result of the EOF method, the first mode (48.7%) is most closely related to the pattern of morphological variability that might be associated with the westerly movement of sediment by longshore current. The spatial variability of the second mode (16.6%) was high in the shoreface of Sinjado, showing a 4-year periodicity of temporal variability. The strong correlation (coefficient 0.73) between the time coefficient and suspended sediment discharge from Nakdong River emphasizes the role of sediment discharge to deposition in this area. The spatial variability of the third mode (11.3%) was distributed mainly around the coast off the eastern part of Sinjado, which is related to the movement of the coastline of Sinjado. Based on the last 5 year's data, our results suggest that the study area is characterized on the whole by a depositional pattern, but the extent of sedimentation is different locally.

Clinical outcomes of a low-cost single-channel myoelectric-interface three-dimensional hand prosthesis

  • Ku, Inhoe;Lee, Gordon K.;Park, Chan Yong;Lee, Janghyuk;Jeong, Euicheol
    • Archives of Plastic Surgery
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    • 제46권4호
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    • pp.303-310
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    • 2019
  • Background Prosthetic hands with a myoelectric interface have recently received interest within the broader category of hand prostheses, but their high cost is a major barrier to use. Modern three-dimensional (3D) printing technology has enabled more widespread development and cost-effectiveness in the field of prostheses. The objective of the present study was to evaluate the clinical impact of a low-cost 3D-printed myoelectric-interface prosthetic hand on patients' daily life. Methods A prospective review of all upper-arm transradial amputation amputees who used 3D-printed myoelectric interface prostheses (Mark V) between January 2016 and August 2017 was conducted. The functional outcomes of prosthesis usage over a 3-month follow-up period were measured using a validated method (Orthotics Prosthetics User Survey-Upper Extremity Functional Status [OPUS-UEFS]). In addition, the correlation between the length of the amputated radius and changes in OPUS-UEFS scores was analyzed. Results Ten patients were included in the study. After use of the 3D-printed myoelectric single electromyography channel prosthesis for 3 months, the average OPUS-UEFS score significantly increased from 45.50 to 60.10. The Spearman correlation coefficient (r) of the correlation between radius length and OPUS-UEFS at the 3rd month of prosthetic use was 0.815. Conclusions This low-cost 3D-printed myoelectric-interface prosthetic hand with a single reliable myoelectrical signal shows the potential to positively impact amputees' quality of life through daily usage. The emergence of a low-cost 3D-printed myoelectric prosthesis could lead to new market trends, with such a device gaining popularity via reduced production costs and increased market demand.

재생냉각 연소실의 냉각성능 해석 (Cooling Performance Analysis of Regeneratively Cooled Combustion Chamber)

  • 조원국;설우석;조광래
    • 한국항공우주학회지
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    • 제32권4호
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    • pp.67-72
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    • 2004
  • 경험식을 이용한 1차원 해석에 의하여 30톤급 재생냉각 연소기의 냉각 유로 설계를 수행하였다. 1차원 해석에 의한 벽온도는 3차원 CFD 해석과 비교하여 약 100 K의 온도차이를 보였다. 동일한 냉각성능을 유지하면서 냉각 채널의 최대 폭이 4mm 와 2mm인 두 가지 설계안을 제시하였다. 냉각유체의 압력강하는 20% 증가할 것으로 예측되었다. 열차 폐 코팅과 탄소 침착물의 열저항을 고려한 경우, 최대 벽온도는 700K로 예측되었다. 본 연구에서 제시한 냉각 방법은 용량이 부족한 것으로 판단되는 바 막냉각이 추가적으로 적용되어야 할 것으로 판단된다.

유벽에 갇힌 기름층의 조류중 손실에 관한 연구 (Containment Failures of Oil Restricted by Vertical Plates in Current)

  • 송무석;현범수;서정천
    • 한국해양환경ㆍ에너지학회지
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    • 제1권2호
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    • pp.40-51
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    • 1998
  • 유벽에 의하여 가두어진 오일의 조류중 거동을 회류수조에서 2차원적인 실험설비를 이용하여 살펴보았다. 유벽을 적정 깊이의 수직판으로 대치하고 레이저 광원을 이용하여 오일과 물과의 경계면 변형을 2 종류의 오일 (콩기름과 경유)에 대하여 관찰하였다. 적용된 조건으로 조류의 속도는 10 cm/s - 35 cm/s, 유벽의 깊이는 4 cm 와 8 cm, 그리고 유량은 2 liter - 8 liter 의 변화를 주었다. 다양한 경계면의 거동과 조건에 따른 누유의 손실 방식을 차원해석을 통하여 정리하고 유적누유와 연속누유의 발생 메카니즘을 설명하였다.

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분극 엔지니어링을 통한 상시불통형 질화알루미늄갈륨 이종접합 전계효과 트랜지스터 설계 (Design of Normally-Off AlGaN Heterojunction Field Effect Transistor Based on Polarization Engineering)

  • 차호영;성혁기
    • 한국정보통신학회논문지
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    • 제16권12호
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    • pp.2741-2746
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    • 2012
  • 본 연구에서는 기존의 질화알루미늄갈륨/질화갈륨 이종접합 구조에서 강한 분극현상으로 인하여 구현하기 어려웠던 상시불통형 소자를 질화알루미늄갈륨 기판 혹은 버퍼층을 이용하여 구현하는 방법을 제안한다. 질화알루미늄갈륨 기판 혹은 버퍼층 위에 더 높은 Al 몰분율을 갖는 장벽층을 성장하고 최상부에 질화갈륨 층을 추가 성장하여 분극전하를 상쇄시키는 방법을 이용하여 선택적으로 게이트 아래의 채널만 공핍시켜 상시불통형 소자를 구현할 수 있다. 이를 통하여 본 연구에서는 상용 전력소자에서 요구하는 게이트 문턱전압 2 V 이상을 갖는 질화알루미늄갈륨 이종접합 전계효과 트랜지스터 에피구조를 제안한다.