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http://dx.doi.org/10.6109/jkiice.2012.16.12.2741

Design of Normally-Off AlGaN Heterojunction Field Effect Transistor Based on Polarization Engineering  

Cha, Ho-Young (홍익대학교)
Sung, Hyuk-Kee (홍익대학교)
Abstract
In this study, we propose a novel structure based on AlGaN substrate or buffer layer to implement a normally-off mode transistor that was difficult to be realized by conventional AlGaN/GaN heterojunction structures. The channel under the gate can be selectively depleted by growing an upper AlGaN barrier with a higher Al mole fraction and a top GaN charge elimination layer on AlGaN substrate or buffer layer. The proposed AlGaN heterojunction field effect transistor can achieve a threshold voltage of > 2 V, which is generally required in power device specification.
Keywords
AlGaN; field-effect transistor; normally-off; polarization;
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