Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance |
Kim, Sung-Min
(Device Research Team, R&D Center, Samsung Electronics Co.)
Yoon, Eun-Jung (Device Research Team, R&D Center, Samsung Electronics Co.) Kim, Min-Sang (Device Research Team, R&D Center, Samsung Electronics Co.) Li, Ming (Device Research Team, R&D Center, Samsung Electronics Co.) Oh, Chang-Woo (Device Research Team, R&D Center, Samsung Electronics Co.) Lee, Sung-Young (Device Research Team, R&D Center, Samsung Electronics Co.) Yeo, Kyoung-Hwan (Device Research Team, R&D Center, Samsung Electronics Co.) Kim, Sung-Hwan (Device Research Team, R&D Center, Samsung Electronics Co.) Choe, Dong-Uk (Device Research Team, R&D Center, Samsung Electronics Co.) Suk, Sung-Dae (Device Research Team, R&D Center, Samsung Electronics Co.) Kim, Dong-Won (Device Research Team, R&D Center, Samsung Electronics Co.) Park, Dong-Gun (Device Research Team, R&D Center, Samsung Electronics Co.) |
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2 | S. M. Kim, E. J. Yoon, H. J. Jo, M. Li, C. W. Oh, S. Y. Lee, K. H. Yeo, M. S. Kim, S. H. Kim, D. U. Choe, J. D. Choe, S. D. Suk, D. Kim, D. Park, K. Kim, and B. Ryu., 'Fully working high performance Multi-channe Field Effect Transistor (McFET) SRAM cell on bulk Si substrate using TiN single metal gate.' Technical Digest of VLSI, pp.196-197, 2005 DOI |
3 | T. Park, S. Choi, D. H. Lee, J. R. Yoo, B. C. Lee, J. Y. Kim, C. G. Lee, K. K. Chi, S. H. Hong, S. J. Hyun, Y. G. Shin, J. N. Han, I. S. Park, U I. Chung, J. T. Moon, E. Yoon, and J. H. Lee., 'Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers.' Technical Digest of VLSI, pp.135-136, 2003 |
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5 | S. M. Kim, E. J. Yoon, H. J. Jo, M. Li, C. W. Oh, S. Y. Lee, K. H. Yeo, M. S. Kim, S. H. Kim, D. U. Choe, J. D. Choe, S. D. Suk, D. Kim, D. Park, K. Kim, and B. Ryu., 'A novel multi-channel field effect transistor(McFET) on bulk Si for high performance sub-80nm application', Technical Digest of IEDM., pp639-642, 2004 DOI |
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8 | E. Yoon, S. Lee, S. Kim, M. Kim, S. H. Kim, L. Ming, S. Suk, K. Yeo, C. W. Oh, J. Choe, D. Choi, D. Kim, D. Park, K. Kim, and B. Ryu., 'Sub 30 nm multi-bridge-channel MOSFET(MBCFET) with metal gate electrode for ultra high performance application' Technical Digest of IEDM., pp.627-630., 2004 DOI |
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