JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance

  • Kim, Sung-Min (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Yoon, Eun-Jung (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Kim, Min-Sang (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Li, Ming (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Oh, Chang-Woo (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Lee, Sung-Young (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Yeo, Kyoung-Hwan (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Kim, Sung-Hwan (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Choe, Dong-Uk (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Suk, Sung-Dae (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Kim, Dong-Won (Device Research Team, R&D Center, Samsung Electronics Co.) ;
  • Park, Dong-Gun (Device Research Team, R&D Center, Samsung Electronics Co.)
  • Published : 2006.03.31
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Abstract

We demonstrate highly manufacturable Multi-channel Field Effect Transistor (McFET) on bulk Si wafer. McFET shows excellent transistor characteristics, such as $5{\sim}6 times higher drive current than planar MOSFET, ideal subthreshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency, maintaining the same source/drain resistance as that of a planar transistor due to the unique feature of McFET. And suitable threshold voltage ($V_T$) for SRAM operation and high static noise margin (SNM) are achieved by using TiN metal gate electrode.

Keywords

References

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