• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.1
• /
• pp.41-47
• /
• 2015

In this paper, the effective electron Schottky barrier height (${\Phi}_{Bn}$) of the Ni silicide/n-silicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ${\Phi}_{Bn}$ is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ${\Phi}_{Bn}$ of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.9
• /
• pp.2000-2006
• /
• 2011

In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.4
• /
• pp.367-380
• /
• 2013

In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.5
• /
• pp.270-274
• /
• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

• Journal of Advanced Marine Engineering and Technology
• /
• v.40 no.1
• /
• pp.69-74
• /
• 2016

Bathymetric changes were studied in the southern sea off the Jinwoo-do Island, which is one of the deltaic barrier islands surrounding the Nakddong river estuary. In this study, 16 bathymetry data sets were obtained from June 2006 to April 2015. Two narrow channels, the one lying between Jinwoo-do and Shinja-do, and the other one lying between Nulcha-do and Jinwoo-do extended into the eastern and western parts of the study area, respectively. The eastern extension of the channel contained a passage of mixed estuarine waters of seawater and river water discharged from the Nakdong river barrier and the west Nakdong River. The western channel connected the Nakdong River estuary with the Busan New Port via a connecting pier. Total volumetric changes of sediments in study area and discharge flow of the Nakdong river barrier were analyzed. Bottom topographical changes occurred mainly in the eastern extension of the channel. These changes were initially characterized by gradual erosion or deposition followed by rapid restoration. The total volume of sediment gradually increased from June 2006 to March 2013, but experienced a sudden decrease in October 2013 because of typhoon Danas. Few fluctuations were observed from October 2013 to April 2015. Analysis of the cross-sectional bathymetry of the north-south direction showed that the deepest point of the eastern channel moved 100-130 m westward and 200 m northward between June 2006 and April 2015.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.28 no.1
• /
• pp.63-69
• /
• 2004

It is of great interest to enhance mixing performance in a microchannel in which the flow is usually characterized as a low Reynolds number (Re) so that good mixing is quite difficult to be achieved in this laminar flow regime. In this regard, we present a new chaotic passive micromixer, named Barrier Embedded Micromixer (BEM), of which the mixing mechanism is based on chaotic flows. In BEM, chaotic flow is induced by periodic perturbation of the velocity field due to periodically inserted barriers along the channel wall while a helical type of flow is obtained by slanted grooves on the bottom surface of the channel in the pressure driven flow. To experimentally compare the mixing performance, a T-microchannel and a microchannel with only slanted grooves were also fabricated. All microchannels were made of PDMS (Polydimethylsiloxane) from SU-8 masters that were fabricated by conventional photolithography. Mixing performance was experimentally characterized with respect to an average mixing intensity by means of color change of phenolphthalein as pH indicator. It was found that mixing efficiency decreases as Re increases for all three micromixers. Experimental results obviously indicate that BEM has better mixing performance than the other two. Chaotic mixing mechanism, suggested in this study, can be easily applied to integrated microfluidic systems , such as Micro-Total-Analysis-System, Lab-on-a-chip and so on.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.342-343
• /
• 2012

We studied the Drain-Induced-Barrier-Lowering (DIBL) effect by different drain engineering. One other drain engineering is symmetric source-drain n-channel MOSFETs (SSD NMOSs), the other drain engineering is asymmetric source-drain n-channel MOSFETs (ASD NMOSs). Devices were fabricated using state of art 40 nm dynamic-random-access-memory (DRAM) technology. These devices have different modes which are deep drain junction mode in SSD NMOSs and shallow drain junction mode in ASD NMOSs. The shallow drain junction mode means that drain is only Lightly-Doped-Drain (LDD). The deep drain junction mode means that drain have same process with source. The threshold voltage gap between low drain voltage ($V_D$=0.05V) and high drain voltage ($V_D$=3V) is 0.088V in shallow drain junction mode and 0.615V in deep drain junction mode at $0.16{\mu}m$ of gate length. The DIBL coefficients are 26.5 mV/V in shallow drain junction mode and 205.7 mV/V in deep drain junction mode. These experimental results present that DIBL effect is higher in deep drain junction mode than shallow drain junction mode. These results are caused that ASD NMOSs have low drain doping level and low lateral electric field.

• Journal of information and communication convergence engineering
• /
• v.9 no.6
• /
• pp.738-742
• /
• 2011

This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction of channel length. DIBL has to be small with decrease of channel length, but it increases with decrease of channel length due to SCEs. This potential model is used to obtain the change of DIBL for DGMOSFET correlated to channel doping profiles. Also device parameters including channel length, channel thickness, gate oxide thickness and doping intensity have been used to analyze DIBL.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.10
• /
• pp.763-766
• /
• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.2
• /
• pp.69-76
• /
• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.