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http://dx.doi.org/10.6109/jkiice.2011.15.9.2000

Dependence of Drain Induced Barrier Lowering for Doping Profile of Channel in Double Gate MOSFET  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.15, no.9, 2011 , pp. 2000-2006 More about this Journal
Abstract
In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.
Keywords
DGMOSFET; Poisson's equation; doping profile; projected range; standard projected range; DIBL;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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