• Title/Summary/Keyword: cell retention

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Distribution Characteristics of Data Retention Time Considering the Probability Distribution of Cell Parameters in DRAM

  • Lee, Gyeong-Ho;Lee, Gi-Yeong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.4
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    • pp.1-9
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    • 2002
  • The distribution characteristics of data retention time for DRAM was studied in connection with the probability distribution of the cell parameters. Using the cell parameters and the transient characteristics of cell node voltage, data retention time was investigated. The activation energy for dielectric layer growth on cell capacitance, the recombination trap energy for leakage current in the junction depletion region, and the sensitivity characteristics of sense amplifier were used as the random variables to perform the Monte Carlo simulation, and the probability distributions of cell parameters and distribution characteristics of cumulative failure bit on data retention time in DRAM cells were calculated. we found that the sensitivity characteristics of sense amplifier strongly affected on the tail bit distribution of data retention time.

Uniform bend transition and twist retention time improvement in a bistable chiral splay nematic liquid crystal cell

  • Kang, Sang-Ho;Jhun, Chul-Gyu;Lee, Seong-Ryong;Kim, Jae-Chang;Yoon, Tae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1173-1176
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    • 2004
  • In a previous work we reported the bistable property by doping a chiral material in a splay cell. The bistable states are the splay state and the metastable 180$^{\circ}$twist state. The retention time of the metastable state can be changed by the variation of d/p (cell gap over pitch), cell gap, pretilt angle, azimuthal anchoring force, liquid crystal material, and so on. In this paper we will present uniform bend transition and twist retention time improvement in a multi-domain BCSN LC cell by using the multi cell gap method.

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Ethanol Production from Tapioca Hydrolysate by Batch and Continuous Cell Retention Cultures (회분 및 연속세포유지 배양에 의한 타피오카당화액으로부터의 에탄올생산)

  • 이용석;이우기
    • KSBB Journal
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    • v.10 no.5
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    • pp.598-603
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    • 1995
  • Batch and continuous cell retention cultures were carried out using tapioca hydrolysate. In batch culture, reducing sugar of about 180g/$\ell$ was almost consumed in about 36 hours, and the concentration of ethanol produced was about 84g/$\ell$ making the ethanol yield 0.48 g-ethanol/g-(reducing sugar). The final yeast concentration was 8.5${\times}$107 cells/ml(about 2.1g/$\ell$). In a total cell retention culture operated with a dilution rate of 0.18h-1, the yeast concentration, the residual reducing sugar concentration, the ethanol concentration, and the volumetric ethanol productivity were about 40g/$\ell$, about 15g/$\ell$, 81.4g/$\ell$, and 14.7g/$\ell$-h, respectively. In another cell retention culture operated with a dilution rate and a bleed ratio of 0.2h-1 and 0.14, respectively, the yeast concentration increased to 22g/$\ell$ and the ethanol concentration oscillated around 68g/$\ell$. The volumetric ethanol productivity was about 13.6g/$\ell$-h and the residual reducing sugar concentration about 12g/$\ell$ containing glucose of about 4.5g/$\ell$. According to the results of batch fermentation using the solid residue from hydrolysate filtration as the substrate, it seemed to have a certain value. Thus, development of an effective reactor system to produce ethanol from this solid residue is in need.

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Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

  • Shin, S.H.;Lee, S.H.;Kim, Y.S.;Heo, J.H.;Bae, D.I.;Hong, S.H.;Park, S.H.;Lee, J.W.;Lee, J.G.;Oh, J.H.;Kim, M.S.;Cho, C.H.;Chung, T.Y.;Kim, Ki-Nam
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.2
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    • pp.69-75
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    • 2003
  • Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

The expression and functional roles of microRNAs in stem cell differentiation

  • Shim, Jiwon;Nam, Jin-Wu
    • BMB Reports
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    • v.49 no.1
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    • pp.3-10
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    • 2016
  • microRNAs (miRNAs) are key regulators of cell state transition and retention during stem cell proliferation and differentiation by post-transcriptionally downregulating hundreds of conserved target genes via seed-pairing in their 3' untranslated region. In embryonic and adult stem cells, dozens of miRNAs that elaborately control stem cell processes by modulating the transcriptomic context therein have been identified. Some miRNAs accelerate the change of cell state into progenitor cell lineages—such as myoblast, myeloid or lymphoid progenitors, and neuro precursor stem cells—and other miRNAs decelerate the change but induce proliferative activity, resulting in cell state retention. This cell state choice can be controlled by endogenously or exogenously changing miRNA levels or by including or excluding target sites. This control of miRNA-mediated gene regulation could improve our understanding of stem cell biology and facilitate their development as therapeutic tools. [BMB Reports 2016; 49(1): 3-10]

A Low Vth SRAM Reducing Mismatch of Cell-Stability with an Elevated Cell Biasing Scheme

  • Yamauchi, Hiroyuki
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.2
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    • pp.118-129
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    • 2010
  • A lower-threshold-voltage (LVth) SRAM cell with an elevated cell biasing scheme, which enables to reduce the random threshold-voltage (Vth) variation and to alleviate the stability-degradation caused by word-line (WL) and cell power line (VDDM) disturbed accesses in row and column directions, has been proposed. The random Vth variation (${\sigma}Vth$) is suppressed by the proposed LVth cell. As a result, the LVth cell reduces the variation of static noise margin (SNM) for the data retention, which enables to maintain a higher SNM over a larger memory size, compared with a conventionally being used higher Vth (HVth) cell. An elevated cell biasing scheme cancels the substantial trade-off relationship between SNM and the write margin (WRTM) in an SRAM cell. Obtained simulation results with a 45-nm CMOS technology model demonstrate that the proposed techniques allow sufficient stability margins to be maintained up to $6{\sigma}$ level with a 0.5-V data retention voltage and a 0.7-V logic bias voltage.

세라믹 필터를 장착한 생물반응기에서 Bacillus thuringiensis의 성장 특성 모델링

  • Gang, Byeong-Cheol;Jang, Ho-Nam
    • 한국생물공학회:학술대회논문집
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    • 2000.11a
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    • pp.233-236
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    • 2000
  • Bacillus thuringiensis (Bt) is the most widely used microbial insecticide in the biological control market. Cultivation of the microorganism to high cell densities offers potential for enhancing the rate of formation as well as the concentration of the desired products In the fermentation broths in bioreactor. With this objective, we developed the new bioreactor incorporating ceramic membrane module for the retention of cell mass. Cell yield and spore formation of Bacillus thuringiensis was improved markedly by adopting this new bioreactor based on glucose -limited feeding operation. It was possible to grow the cell and the heat-resistant spore to above $1.2\;{\times}\;10^{10}\;CFU/ml$ density. With glucose-limited operation, we studied the growth behavior of Bacillus thuringiensis during the cell retention culture. Linear growth of Bacillus thuringiensis was observed under glucose-limited culture, which matched well with simple mathematical model of cell retention culture.

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A Nonvolatile Refresh Scheme Adopted 1T-FeRAM for Alternative 1T-DRAM

  • Kang, Hee-Bok;Choi, Bok-Gil;Sung, Man-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.98-103
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    • 2008
  • 1T1C DRAM has been facing technological and physical constraints that make more difficult their further scaling. Thus there are much industrial interests for alternative technologies that exploit new devices and concepts to go beyond the 1T1C DRAM technology, to allow better scaling, and to enlarge the memory performance. The technologies of DRAM cell are changing from 1T1C cell type to capacitor-less 1T-gain cell type for more scalable cell size. But floating body cell (FBC) of 1T-gain DRAM has weak retention properties than 1T1C DRAM. FET-type 1T-FeRAM is not adequate for long term nonvolatile applications, but could be a good alternative for the short term retention applications of DRAM. The proposed nonvolatile refresh scheme is based on utilizing the short nonvolatile retention properties of 1T-FeRAM in both after power-off and power-on operation condition.

Continuous Propionic Acid Production from Cheese Whey Using In Situ Spin Filter

  • Gupta, Achin;Srivastava, Ashok K.
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.6 no.1
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    • pp.1-5
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    • 2001
  • The potential use of spin filter device to retain Propionibacterium acidipropionici in the bioreactor under continuous mode of fermentation, and improve acid productivity, was examined. The yield of propionic acid based on lactose concentration was 51% in batch and 54% in continuous (dilution rate = 0.05 h(sup)-1) operation. The yield in continuous fermentation with cell retention using spin filter of 10 micron size (dilution rate = 0.05 h(sup)-1) was even higher at 70% (w/w). The volumetric productivity under batch and continuous mode of operation were 0.312g L(sup)-1 h(sup)-1 and 0.718g L(sup)-1 h(sup)-1 respectively. Continuous fermentation with cell retention demonstrated even higher volumetric productivities at 0.98g L(sup)-1 h(sup)-1 with out clogging problems. It could be used for utilization of cheese whey to produce propionic acid at higher yield and productivities.

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Study of Data Retention Characteristics with surrounding cell's state in a MLC NAND Flash Memory (멀티 레벨 낸드 플레쉬 메모리에서 주변 셀 상태에 따른 데이터 유지 특성에 대한 연구)

  • Choi, Deuk-Sung;Choi, Sung-Un;Park, Sung-Kye
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.4
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    • pp.239-245
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    • 2013
  • The data retention characteristics depending on neighbor cell's threshold voltage (Vt) in a multilevel NAND flash memory is studied. It is found that a Vt shift (${\Delta}Vt$) of the noted cell during a thermal retention test is increased as the number of erase-state (lowest Vt state) cells surrounding the noted cell increases. It is because a charge loss from a floating gate is originated from not only intrinsic mechanism but also lateral electric field between the neighboring cells. From the electric field simulation, we can find that the electric field is increased and it results in the increased charge loss as the device is scaled down.