• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.2
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• pp.835-840
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• 2011

In this study, a disk-type piezoelectric transformer was fabricated. Its diameter was 50 mm and thickness was 4.5 mm. The driving and generating electrode with their gap of 1mm were fabricated on the top surface. But the common electrode was fabricated on the whole bottom surface. The electrode surface of driving and generating part on the top surface was divided into 2, 4 and 8 pieces. The electrical characteristics with its electrode variation was measured in the range of load resistance of $100{\Omega}{\sim}10_{K\Omega}$. We investigated quantitively the influence of the set-up voltage ratio.

• Journal of Electrochemical Science and Technology
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• v.14 no.4
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• pp.320-325
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• 2023

In Li-ion batteries, a thick electrode is advantageous for lowering the inactive current collector portion and obtaining a high energy density. One of the critical failure mechanisms of thick electrodes is inhomogeneous lithiation and delithiation owing to the axial location of the electrode. In this study, it was confirmed that the top layer of the composite electrode contributes more to the charging step owing to the high ionic transport from the electrolyte. A high-loading multilayered electrode containing LiFePO₄ (LFP) and LiNi_0.8Co_0.1Mn_0.1O₂ (NCM811) was developed to overcome the inhomogeneous electrochemical reactions in the electrode. The electrode laminated with LFP on the top and NCM811 on the bottom showed superior cyclability compared to the electrode having the reverse stacking order or thoroughly mixed. This improvement is attributed to the structural and interfacial stability of LFP on top of the thick electrode in an electrochemically harsh environment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1151-1156
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• 2009

Unstable sustain discharges can occur at the bottom cells of the panel at high temperature. To solve this problem, the wall charge variation during an address period was investigated. A test panel of 7.5 inch XGA level was used and one green cell was measured. In order to realize operating condition equal to that of the bottom cells of 50 inch panel, the addressing stress pulses are applied. It seems that the resultant wall charge loss during address period increased with increase of stress time, temperature, pressure and Xe %. Wall charge loss increases with potential difference between scan electrode and address electrode, therefore wall charge loss can be minimized by the increase of scan voltage during address period.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.74-77
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• 2006

Thin $AuO_x$ layer was formed by $O_2$ plasma treatment on Au electrode. The surface work function of plasma treatment showed higher by 0.5 eV than that of bare Au, reducing the hole injection barrier at the Au/pentacene interface. Using $O_2$ plasma-treated Au source-drain electrodes, the field-effect mobility of bottom-contact pentacene-OTFT was increased from 0.05 to 0.1 $cm^2/Vs$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.264-267
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• 2004

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the $LaNiO_3$ (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thinfilms were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization Pr and coercive field were $23.5\;C/cm^2$ and 120 kV/cm, respectively.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.6
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.172-175
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• 2003

ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..