Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation AZO(ZnO:Al) thin film for FBAR by FTS method

대향타겟스퍼터링법에 의한 FBAR용 AZO(ZnO:Al) 전극의 제작

  • 금민종 (경원대학교 전기정보공학과) ;
  • 신성권 (동해대학교 정보통신공학과) ;
  • 가출현 (신성대학교 전기과) ;
  • 추순남 (경원전문대 전기제어시스템과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Published : 2003.07.10
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Abstract

ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..

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