• Title/Summary/Keyword: boron effect

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Effect of Moisture in a Vacuum Chamber on the Deposition of c-BN Thin Film using an Unbalanced Magnetron Sputtering Method (비대칭 마그네트론 스퍼터링 방법에 의한 질화붕소막의 증착시 반응실내의 초기 수분이 입방정질화붕소 박막의 형성에 미치는 영향)

  • Lee, Eun-Sook;Park, Jong-Keuk;Lee, Wook-Seong;Seong, Tae-Yeon;Baik, Young-Joon
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.620-624
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    • 2012
  • The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

A study on the characterization of shear surface according to shear rate and shear mechanism in high temperature shear process of boron steel (보론강 고온전단공정에서 전단속도 및 메커니즘에 따른 전단면 특성 파악에 관한 연구)

  • Jeon, Yong-Jun;Choi, Hyun-Seok;Lee, Hwan-Ju;Kim, Dong-Earn
    • Design & Manufacturing
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    • v.11 no.2
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    • pp.37-41
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    • 2017
  • With light vehicle weight gradually becoming ever more importance due to tightened exhaust gas regulations, hot-stamping processing using boron alloyed steel is being applied more and more by major automobile OEMs since process assures both moldability and a high strength of 1.5 GPa. Although laser trimming is generally applied to the post-processing of the hot-stamped process with high strength, there have been many studies of in-die hot trimming using shear dies during the quenching of material in order to shorten processing times. As such, this study investigated the effects of the Shear rate and Shear mechanism on shear processes during the quenching process of hot-stamping material. In case of pad variable, padding force is very weak compared with shear force, so it does not affect the shear surface. In case of shear rate, the higher the shear at high temperatures and the higher the friction effect. As a result the rollover and the fracture distribution decreased, and the burnish distribution increased. Therefore, it is considered that the shear quality is guaranteed when high shear rate is applied in high temperature shear process.

Surface Characteristics and Photocatalytic Propertiy of B Doped TiO2 Layer Synthesized by Plasma Electrolytic Oxidation Process (Plasma Electrolytic Oxidation 방식으로 제조된 B Doped TiO2의 표면특성과 광촉매 특성)

  • Lee, Jong-Ho;Lee, Young-Ki;Kim, Young-Jig;Oh, Han-Jun
    • Korean Journal of Materials Research
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    • v.31 no.10
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    • pp.552-561
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    • 2021
  • For the purpose of manufacturing a high efficiency TiO2 photocatalyst, B-doped TiO2 photocatalysts are synthesized using a plasma electrolytic oxidation method in 0.5 M H2SO4 electrolyte with different concentrations of H3BO3 as additive. For the B doped TiO2 layer fabricated from sulfuric electrolyte having a higher concentration of H3BO3 additive, the main XRD peaks of (101) and (200) anatase phase shift gradually toward the lower angle direction, indicating volume expansion of the TiO2 anatase lattice by incorporation of boron, when compared with TiO2 layers formed in sulfuric acid with lower concentration of additive. Moreover, XPS results indicate that the center of the binding energy peak of B1s increases from 191.45 eV to 191.98 eV, which suggests that most of boron atoms are doped interstitially in the TiO2 layer rather than substitutionally. The B doped TiO2 catalyst fabricated in sulfuric electrolyte with 1.0 M H3BO3 exhibits enhanced photocurrent response, and high efficiency and rate constant for dye degradation, which is ascribed to the synergistic effect of the new impurity energy band induced by introducing boron to the interstitial site and the improvement of charge transfer reaction.

An In-silico Simulation Study on Size-dependent Electroelastic Properties of Hexagonal Boron Nitride Nanotubes (인실리코 해석을 통한 단일벽 질화붕소 나노튜브의 크기 변화에 따른 압전탄성 거동 예측연구)

  • Jaewon Lee;Seunghwa Yang
    • Composites Research
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    • v.37 no.2
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    • pp.132-138
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    • 2024
  • In this study, a molecular dynamics simulation study was performed to investigate the size-dependent electroelastic properties of single-walled boron nitride nanotubes(BNNT). To describe the elasticity and polarization of BNNT under mechanical loading, the Tersoff potential model and rigid ion approximation were adopted. For the prediction of piezoelectric constants and Young's modulus of BNNTs, piezoelectric constitutive equations based on the Maxwell's equation were used to calculate the strain-electric displacement and strain-stress relationships. It was found that the piezoelectric constants of BNNTs gradually decreases as the radius of the tubes increases showing a nonnegligible size effect. On the other hand, the elastic constants of the BNNTs showed opposites trends according to the equivalent geometrical assumption of the tubular structures. To establish the structure-property relationships, localized configurational change of the primarily bonded B-N bonded topology was investigated in detail to elucidate the BNNT curvature dependent elasticity.

Screening and broadening effects on the mobilities for p-type Si and Ge (Screening 현상 및 broadening 현상이 p형 Si과 Ge의 이동도에 미치는 효과)

  • 전상국
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.581-588
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    • 1997
  • The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

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Effect of Annealing Temperature on Superconducting Properties of Charcoal Doped $MgB_2$ (목탄이 첨가된 $MgB_2$의 초전도 성질에 미치는 열처리 온도의 영향)

  • Kim, Nam-Kyu;Tana, Kai Sin;Jun, Byung-Hyuk;Park, Hai-Woong;Joo, Jin-Ho;Kim, Chan-Joong
    • Progress in Superconductivity
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    • v.9 no.1
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    • pp.80-84
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    • 2007
  • Charcoal was used as a carbon source for improving the critical current density of $MgB_2$ and the effect of annealing temperature on the $J_c$ of $MgB_2$ was investigated. The charcoal powder used in this study was $1{\sim}2$ microns in size and was prepared by wet attrition milling. $MgB_2$ bulk samples with a nominal composition of $Mg(B_{0.95}C_{0.05})_2$ were prepared by in situ process of Mg and B powders. The powder mixture was uniaxially compacted into pellets and heat treated at temperatures of $650^{\circ}C\;-\;1000^{\circ}C$ for 30 minutes in flowing Ar gas. It was found that superconducting transition temperature of $Mg(B_{0.95}C_{0.05})_2$ decreased by charcoal additions which indicates the carbon substitution for boron site. $J_c$ of $Mg(B_{0.95}C_{0.05})_2$ was lower than that of the undoped $MgB_2$ at the magnetic fields smaller than 4 Tesla, while it was higher than that of the undoped sample especially at the magnetic field higher than 4 T. High temperature annealing seems to be effective in increasing $J_c$ due to the enhanced carbon diffusion into boron sites.

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Effect of Hot-stamping on Microstructures and Tensile Properties of Al-Si Coated Boron Steel Welds with Laser Source (Al-Si 도금된 보론강 레이저 소스에 따른 레이저 용접부의 미세조직과 기계적 성질에 미치는 핫스탬핑 처리의 영향)

  • Oh, Myeong-Hwan;Kong, Jong-Pan;Kwon, Min-Suck;Kang, Chung-Yun
    • Journal of Welding and Joining
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    • v.31 no.6
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    • pp.96-106
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    • 2013
  • In this study, the effect of laser source($CO_2$ and Nd:YAG) on the microstructure and tensile properties of laser welded Al-Si coated boron steel(1.2mmt) was investigated with before and after hot-stamping. In case of as welds condition, fracture occurred in base metal unrelated to the laser source. It could be explained that tensile strength of fusion zone composed of martensite and bainite is higher than that of base metal that contains a lot of ferrite despite dilution of Al and Si from coating layer to fusion zone. In case of hot-stamping condition, the fracture occurred in fusion zone irrelevant to laser source and the tensile strength was lower than hot stamped base metal. In the $CO_2$ laser welds, $Fe_3$(Al,Si) formed near the bond line was transformed into ferrite during hot-stamping. Therefore tensile strength of bond line is lower than that of base metal and center of fusion zone and the fracture occurred in the bond line. On the other hand, in the Nd:YAG laser welds, the higher concentration of Al formed the ferrite in the fusion zone during hot-stamping treatment. Also, the thickness of centerline was thinner than that of base metal. Therefore, it is considered that fracture occurred in centerline of fusion zone due to effect of concentration stress, and it leaded to a lower tensile strength and elongation.

Calcium-Boron Interaction in Exopolysaccharide Production by the Cyanobacterium, Nostoc spongiaeforme

  • Singh;Netu;Asthana, R.K.;Singh, S.P.
    • Journal of Microbiology and Biotechnology
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    • v.10 no.3
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    • pp.381-385
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    • 2000
  • The effect and interaction of Ca and B on exopolysaccharide (EPS) synthesis in the diazotrophically growing cyanobacterium. Nostoc spongiaeforme, was investigated. The absence of B inhibited EPS synthesis 1.56-fold ($16\mu\textrm{g}$ glucose equivalent/mg dry weight, 16 d) over the control cells ($25\mu\textrm{g}$ glucose equivalent) grown in medium containing 0.5 mM Ca and $8{\mu}{\textrm}{m}$ B. When B concentration was raised to $40{\mu}{\textrm}{m}$, EPS production was stimulated 1.8-fold. Reduction of Ca concentraion to one-half (0.25 mM) resulted in increased B demand (16$\muM$) by the cells for EPS production at par with the normal sets. However, without Ca, EPS production also increased as B increased. Addition of B to a Ca-free medium stimulated cyanobacterial diazotrophic growth as well as synthesis of Chl a and phycocyanin (0-8 d). The data suggest B-dependent diazotrophic growth during Ca-deficiency and point to and important interactive role of Ca and B in regulation of cyanobacterial EPS synthesis.

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Comparison Study on Electrical Properties of SiGe JFET and Si JFET (SiGe JFET과 Si JFET의 전기적 특성 비교)

  • Park, B.G.;Yang, H.D.;Choi, C.J.;Shim, K.H.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.11
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    • pp.910-917
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    • 2009
  • We have designed a new structures of Junction Field Effect Transistor(JFET) using SILVACO simulation to improve electrical properties and process reliability. The device structure and process conditions of Si control JFET(Si JFET) were determined to set cut off voltage and drain current(at Vg=0 V) to -0.46 V and $300\;{\mu}A$, respectively. Among many design parameters influencing the performance of the device, the drive-in time of p-type gate is presented most predominant effects. Therefore we newly designed SiGe JFET, in which SiGe layers were placed above and underneath of Si-channel. The presence of SiGe layer could lessen Boron into the n-type Si channel, so that it would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer could be explained in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

Remedial treatment of decayed wood using borate rod (붕산염 막대를 이용한 부후재의 구제처리)

  • Kim, Gyu-Hyeok;Kim, Jae-Jin;Kim, Hyoung-Jun
    • Journal of Conservation Science
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    • v.8 no.1 s.11
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    • pp.23-27
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    • 1999
  • This study was conducted to investigated the feasibility of using a fused borate rod for the remedial treatment, using pine specimens decayed by Tyromyces palustris and Gloeophyllum trabeum. The borate rod appears to be a useful remedial product for eliminating as well as preventing decay. However, the easiness of retention gradient of boron according to the distance from a rod treatment site, is required for more effective treatment. The effect of the extension of diffusion period and rod size on retention gradient of boron should be fully investigated for successful remedial treatments using borate rod.

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