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Surface Characteristics and Photocatalytic Propertiy of B Doped TiO2 Layer Synthesized by Plasma Electrolytic Oxidation Process

Plasma Electrolytic Oxidation 방식으로 제조된 B Doped TiO2의 표면특성과 광촉매 특성

  • Lee, Jong-Ho (Department of Chemistry, Hanseo University) ;
  • Lee, Young-Ki (School of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kim, Young-Jig (School of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Oh, Han-Jun (Department of Materials Science, Hanseo University)
  • 이종호 (한서대학교 화학과) ;
  • 이영기 (성균관대학교 신소재공학부) ;
  • 김영직 (성균관대학교 신소재공학부) ;
  • 오한준 (한서대학교 신소재공학과)
  • Received : 2021.09.12
  • Accepted : 2021.09.16
  • Published : 2021.10.27

Abstract

For the purpose of manufacturing a high efficiency TiO2 photocatalyst, B-doped TiO2 photocatalysts are synthesized using a plasma electrolytic oxidation method in 0.5 M H2SO4 electrolyte with different concentrations of H3BO3 as additive. For the B doped TiO2 layer fabricated from sulfuric electrolyte having a higher concentration of H3BO3 additive, the main XRD peaks of (101) and (200) anatase phase shift gradually toward the lower angle direction, indicating volume expansion of the TiO2 anatase lattice by incorporation of boron, when compared with TiO2 layers formed in sulfuric acid with lower concentration of additive. Moreover, XPS results indicate that the center of the binding energy peak of B1s increases from 191.45 eV to 191.98 eV, which suggests that most of boron atoms are doped interstitially in the TiO2 layer rather than substitutionally. The B doped TiO2 catalyst fabricated in sulfuric electrolyte with 1.0 M H3BO3 exhibits enhanced photocurrent response, and high efficiency and rate constant for dye degradation, which is ascribed to the synergistic effect of the new impurity energy band induced by introducing boron to the interstitial site and the improvement of charge transfer reaction.

Keywords

Acknowledgement

This work was supported by 2020 research program of the Hanseo University in Korea.

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