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http://dx.doi.org/10.4313/JKEM.2009.22.11.910

Comparison Study on Electrical Properties of SiGe JFET and Si JFET  

Park, B.G. (전북대학교 반도체과학기술학과)
Yang, H.D. (전북대학교 반도체과학기술학과)
Choi, C.J. (전북대학교 반도체과학기술학과)
Shim, K.H. (전북대학교 반도체과학기술학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.11, 2009 , pp. 910-917 More about this Journal
Abstract
We have designed a new structures of Junction Field Effect Transistor(JFET) using SILVACO simulation to improve electrical properties and process reliability. The device structure and process conditions of Si control JFET(Si JFET) were determined to set cut off voltage and drain current(at Vg=0 V) to -0.46 V and $300\;{\mu}A$, respectively. Among many design parameters influencing the performance of the device, the drive-in time of p-type gate is presented most predominant effects. Therefore we newly designed SiGe JFET, in which SiGe layers were placed above and underneath of Si-channel. The presence of SiGe layer could lessen Boron into the n-type Si channel, so that it would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer could be explained in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.
Keywords
JFET; SiGe; Si; Junction; SILVACO;
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