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http://dx.doi.org/10.4191/kcers.2012.49.6.620

Effect of Moisture in a Vacuum Chamber on the Deposition of c-BN Thin Film using an Unbalanced Magnetron Sputtering Method  

Lee, Eun-Sook (Electronic Materials Center, Korea Institute of Science and Technology)
Park, Jong-Keuk (Electronic Materials Center, Korea Institute of Science and Technology)
Lee, Wook-Seong (Electronic Materials Center, Korea Institute of Science and Technology)
Seong, Tae-Yeon (Department of Materials Science & Engineering, Korea University)
Baik, Young-Joon (Electronic Materials Center, Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Ceramic Society / v.49, no.6, 2012 , pp. 620-624 More about this Journal
Abstract
The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.
Keywords
Boron nitride; Thin films; Water; Absorption; Heat treatment;
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  • Reference
1 L. Vel, G. Demazeau, and J. Etourneau, "Cubic Boron Nitride : Synthesis, Physicochemical Properties and Applications," Mater. Sci. Eng. B, 10 149-64 (1991).   DOI
2 P. Widmayer, P. Ziemann, S. Ulrich, and H. Ehrhardt, "Phase Stability and Stress Rlaxation Effects of Cubic Boron Nitride Thin Films Under 350 Kev Ion Irradiation," Dia. Rel. Mater., 6 621-25 (1997).   DOI   ScienceOn
3 T. A. Friedmann, K. F. McCarty, E. J. Klaus, J. C. Barbour, W. M. Clift, H. A. Johnsen, D. L. Medlin, M. J. Mills, and D. K. Ottesen, "Pulsed Laser Deposition of BN onto Silicon (100) Substrates at $600^{\circ}C$," Thin Solid Films., 237 48-56 (1994).   DOI
4 M. Lattermann, S. Ulrich, and J. Ye, "New Approach in Depositing Thick, Layered Cubic Boron Nitride Coatings by Oxygen Addition - Structural and Compositional Analysis," Thin Solid Films., 515 1058-62 (2006).   DOI   ScienceOn
5 H.-S. Kim. J.-K. Park, W-.S. Lee, and Y.-J. Baik, "Variation of Residual Stress in Cubic Boron Nitride Film Caused by Hydrogen Addition during Unbalanced Magnetron Sputtering," Thin Solid Films., 519 7871-74 (2011).   DOI   ScienceOn
6 J. F .O'Hanlon, "A User's Guide to Vacuum Technology," pp. 58, Wiley, New York, 1989.
7 J. Ullmann, J. E. E. Baglin, and A. J. Kellock, "Effect of MeV Ion Irradiation of Thin Cubic Boron Nitride Films," J. Appl. Phys., 836 2980-87 (1998).