• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.2
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• pp.248-253
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• 1987

Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.

• Journal of the Korean Wood Science and Technology
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• v.31 no.3
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• pp.24-29
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• 2003

This research was performed to investigate the diffusivity of borate rods in radiata pine (Pinus radiata D. Don) conditioned to 40 percent moisture content (MC). The deepest penetration of boron were observed in the longitudinal direction, followed by the radial and the tangential directions. The boron loading on the wood face adjacent to the borate rod tended to increase with diffusion time in all directions. To mathematically quantify boron diffusion, the diffusion coefficient of boron was determined using Boltzmann's transformation by assuming that it was a function of concentration only. The values of the longitudinal diffusion coefficients were between 1.3×10^-8 cm²/sec and 9.2×10^-8 cm²/sec. The radial diffusion coefficients were between 1.4×10^-8 cm²/sec and 9.5×10^-8 cm²/sec, and the tangential diffusion coefficients were between 5.2×10^-9 cm²/sec and 1.3×10^-8 cm²/sec. The differences of diffusion coefficients between the longitudinal direction and the radial direction were slight, although their concentration profiles were markedly different. This indicates that the amount of boron loading on the wood face adjacent the borate rod is one of the most important factor for boron penetration in wood with low MC.

• Journal of the Korean Wood Science and Technology
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• v.34 no.5
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• pp.98-103
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• 2006

Radial and tangential diffusion coefficients of boron in wood under water leaching conditions were determined from the change of concentration profiles of boron. Egner's solution was used to obtain variable diffusion coefficients of boron because it has been known to be the only method to determine variable diffusion coefficients with no cumbersome assumption. The values of diffusion coefficients were between $0.18{\times}10^{-6}m^2/sec$ and $25.6{\times}10^{-6}cm^2/sec$. They increased with the increase of sample thicknesses, and decreased with the increase of leaching times. There was a region where Egner's method was not valid. However, Egner's solution illustrates a convenient way to evaluate diffusion characteristics of boron from wood under water leaching conditions. The diffusion coefficients at wood surface may be regarded as leaching coefficients.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.708-712
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• 2004

Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Journal of Welding and Joining
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• v.9 no.3
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• pp.26-33
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• 1991

As it takes very long time for the Transient Liquid Phase(TLP) bonding, we tried to reduce the bonding time by changing insert material for the high diffusivity element. On this study boron powder was doped as a insert material on the bonding surface of Rene 80 superalloy, and diffusion treated at 1150.deg.C under vacuum. On this method differently from the TLP bonding the insert material was not melted during bonding but only the base metal reacted with the boron was inducedly melted. Therefore, as this bonding mechanism is different from the existing ones, it is suggested as a Melting Induced Diffusion Bonding. When this process was used for the diffusion bonding, the bonding time including homogenization decreased greatly compared to the conventional TLP bonding.

• Journal of Conservation Science
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• v.7 no.2
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• pp.60-67
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• 1998

The effects of moisture content (MC) and diffusion period on the diffusion of boron from borate rod through Pinus densiflora and P. koraiensis were investigated as a preliminary research of integrated remedial treatment for heritage wooden structures using borate rod. After equilibrating MCs of samples (15, 25, and 40%), borate rod (1,000 mg) was inserted into the sample, and stored for diffusion of boron at room temperatures ($23^{\circ}C$) for 2, 4, 8, and 12 weeks. Wafers were serially cut at constant intervals from rod treatment point and the boron penetration through longitudinal and transverse direction was measured by staining with boron indicator. For boron diffusion, MC above fiber saturation point was needed, and the diffusion rates increased with time. The fastest rates of diffusion were observed in longitudinal direction, followed by the radial and then the tangential direction. The rates of diffusion in all directions were the fastest in P. koraiensis. In P. densiflora, the diffusion rates through heartwood was faster than that in sapwood in longitudinal direction and vice versa in transverse direction. Based on the best result of this study, optimal space between rod insertion points could be recommended as follows; approximately 120 mm for P. koraiensis and heartwood of P. densiflora, 60 mm for sapwood of P. densiflora in longitudinal direction, and approximately 30 mm for all species tested in transverse direction. However, the effect of rod size and long-term exposure for diffusion on boron movement should be fully investigated for the accurate evaluation of optimal space between rod holes.