Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 24 Issue 2
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- Pages.248-253
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- 1987
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- 1016-135X(pISSN)
Boron Diffusion of Low Concentration through Poly $Poly{\cdot}Si-SiO_2$
$Poly{\cdot}Si-SiO_2$ 를 통한 저농도 붕소확산
- Kim, Jung-Hoe (Dept. of Elec. Eng., Seoul City Univ.) ;
- Ju, Byeong-Kwon (Dept. of Elec. Eng., Seoul City Univ.) ;
- Kim, Chul-Ju (Dept. of Elec. Eng., Seoul City Univ.)
- 김정회 (서울시립대학 전자공학과) ;
- 주병권 (서울시립대학 전자공학과) ;
- 김철주 (서울시립대학 전자공학과)
- Published : 1987.02.01
Abstract
Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.
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