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Fabrication of p-type FinFETs with a 20 nm Gate Length using Boron Solid Phase Diffusion Process  

Cho, Won-Ju (Department of Electronic Materials Engineering, College of Electronics and Information, Kwangwoon University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.6, no.1, 2006 , pp. 16-21 More about this Journal
Abstract
A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.
Keywords
FinFETs; 20 nm gate length; solid phase diffusion; ultra shallow junction;
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Times Cited By KSCI : 2  (Citation Analysis)
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