JSTS:Journal of Semiconductor Technology and Science

  • 제6권1호
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  • Pages.16-21
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  • 2006
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Fabrication of p-type FinFETs with a 20 nm Gate Length using Boron Solid Phase Diffusion Process

  • Cho, Won-Ju (Department of Electronic Materials Engineering, College of Electronics and Information, Kwangwoon University)
  • 발행 : 2006.03.31
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초록

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

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참고문헌

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