• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.29-33
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• 2012

The demand for 3D wafer level integration has been increasing significantly. Although many technical challenges of wafer stacking are still remaining, wafer stacking is a key technology for 3D integration due to a high volume manufacturing, smaller package size, low cost, and no need for known good die. Among several new process techniques Cu-to-Cu wafer bonding is the key process to be optimized for the high density and high performance IC manufacturing. In this study two main challenges for Cu-to-Cu wafer bonding were evaluated: misalignment and bond quality of bonded wafers. It is demonstrated that the misalignment in a bonded wafer was mainly due to a physical movement of spacer removal step and the bond quality was significantly dependent on Cu bump dishing and oxide erosion by Cu CMP.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1943-1945
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• 1996

In this paper, we developed a modified direct bonding method for the application of vacuum devices. By the proposed method, we successfully bonded the following materials: Si-Si, Si-$SiO_2$-Si, glass-Si, and glass-$SiO_2$-Si. In our experiments, we used corning #7070 wafer type glass and (100) or (110) single crystalline silicon wafers. In order to enhance the initial bonding strength we contacted the materials to be bonded as D. I. water wetted on the surfaces and evaporated the water under the room temperature and atmosphere environment. Finally we realized the glass bonding by simple direct bonding method which has been performed by electrostatic bonding method until now.

• 대한치과기공학회지
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• 제39권3호
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• pp.153-159
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• 2017

Purpose: In this study, a corresponding porcelain coating material was applied to dental Co-Cr metal among PFM. Methods: The bonding strength of the fired specimens was measured by a three-point flexural rigidity test. SEM/EDS was used to observe the surface component of specimens. Results: First, All groups were higher than the minimum bonding strength of 25 MPa specified in ISO 9693 for dental metal-ceramics specimens. Second, The bonding strength of control group(WO) is 44.64 MPa. Experimental group DM was 35.45 MPa and DP was 31.82 MPa(P<0.05). Tukey's HSD tests results have shown that the bonding strength in control group(WO) is higher than that of experimental group(DM, DP). Third, In the case of metal - porcelain bonding strength, the application of opaque porcelain and firing were higher than those of the group treated with degassing process. Conclusion: The bonding strength was higher when the powder opaque porcelain was applied than the paste opaque porcelain.

• Journal of the Korean Wood Science and Technology
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• 제47권5호
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• pp.655-662
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• 2019

This study evaluated the multi-bonding performances of timbers as well as those of reinforcement and timber to obtain data for preparing guidelines regarding the use of timbers as large structural members. For the multi-bonding performances of timbers, four types of bonding surfaces were prepared according to the pith position. For the bonding performances of FRP (fiber-reinforced plastic)/steel plate and timber, a total of 11 types of specimens were produced for the selection of the appropriate adhesive. The bonding performances of the produced specimens were evaluated through a water soaking delamination test, a water boiling delamination test, and a block shear strength test. The test results showed that the bonding strength of the bonding surface according to the pith position was highest in the specimen for which the two sections with the pith at the center of the cross-section on timber and between the bonding surfaces (the tangential and radial sections were mixed) were bonded. Furthermore, the specimens for which the section (radial section) with the pith on the bonding surface of the timber was bonded showed a high delamination percentage. The results of the block shear strength test showed that the bonding section did not have a significant effect on the shear strength, and that the measured wood failure percentage was higher than the KS standard value. The PVAc adhesive showed the highest bonding strength between larix timber and GFRP (glass FRP). Furthermore, the epoxy and polyurethane adhesives showed good bonding strength for CFRP (carbon FRP) and structure steel, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.52-55
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• 2016

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

• 전자통신동향분석
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• 제37권2호
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• pp.53-61
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• 2022

MicroLEDs have various advantages and application areas and are in the spotlight as next-generation displays. Nevertheless, the commercialization of microLEDs is slow because of high cost as well as difficulties in the transfer, bonding, and bad pixel repairing process. In this study, we review the development trends of transfer, bonding, and defective pixel repair technologies, which are critical for microLED commercialization, focusing on materials that determine these technologies. In addition, we focus on the simultaneous transfer bonding technology developed by the Electronics and Telecommunications Research Institute, which has been attracting enormous research attention recently.

• 한국생산제조학회지
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• 제22권5호
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• pp.812-817
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• 2013

This study demonstrates the diffusion bonding process between a tungsten carbide shank (K30) and tungsten carbide (DX5) for micro WC-PCD tool fabrication. A type of nickel alloy was used as the filler met alto improve the bond ability between K30 and DX5. The bonding pressure, time, and surrounding conditions were kept constant. In particular, the normal pressure was controlled precisely under buckling analysis. Diffusion bonding was performed at various operation temperatures (1170-1770 K) by using a specially designed jig. The microstructure on the localized bonded surface was analyzed using scanning electron microscopy and optical microscopy. In the case of diffusion bonding of WCat 1370-1770K, the filler metal melted completely and diffused between the two base metals, and they were bonded more tightly on both sides than at temperatures below 1370 K. Our results demonstrated the importance of sensitive temperature dependence of diffusion bonding.

• 마이크로전자및패키징학회지
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• 제24권1호
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• pp.17-25
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• 2017

Recently, research and application for a power module have been actively studied according to the increasing demand for the production of vehicles, smartphones and semiconductor devices. The power modules based on the transient liquid phase (TLP) technology for bonding of power semiconductor devices have been introduced in this paper. The TLP bonding has been widely used in semiconductor packaging industry due to inhibiting conventional Pb-base solder by the regulation of end of life vehicle (ELV) and restriction of hazardous substances (RoHS). In TLP bonding, the melting temperature of a joint layer becomes higher than bonding temperature and it is cost-effective technology than conventional Ag sintering process. In this paper, a variety of TLP bonding technologies and their characteristics for bonding of power module have been described.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.511-512
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• 2006

Tungsten coatings with different interlayers onto the oxygen-free copper substrates were fabricated by atmosphere plasma spraying. The effects of different interlayers of NiCrAl, NiAl and W/Cu on bonding strength were studied. SEM, EDS and XRD were used to investigate the photographs and compositions of these coatings. The tungsten coatings with different initial particle sizes resulted in different microstructures. Oxidation was not detected in the tungsten coating, but in the interlayer, it was found by both XRD and EDS. The tungsten coating deposited directly onto the copper substrate presented higher bonding strength than those with different interlayers.