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Temperature Dependence of Bonding Structure of GZO Thin Film Analyzed by X-ray Diffractometer  

Oh, Teresa (Division of Semiconductor, Choengju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.1, 2016 , pp. 52-55 More about this Journal
GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.
GZO; XRD; Crystal structure; Amorphous structure; Annealing;
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Times Cited By KSCI : 7  (Citation Analysis)
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