• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 추계학술대회
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• pp.425-428
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• 2017

본 논문에서는 진동 에너지를 이용하여 에너지를 수확하는 전파 정류 하베스팅 회로를 설계하였다. 설계된 회로는 저전압에서도 전력효율이 우수하도록 Beta-Multiplier를 이용하여 Body-Bias technique을 Negative Voltage Converter에 적용하였으며, Comparator를 Bulk-Driven type으로 설계하였다. 제안된 회로는 $0.35{\mu}m$ CMOS 공정으로 설계하였으며, 설계된 회로의 칩 면적은 $931{\mu}m{\times}785{\mu}m$이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.655-661
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• 2013

In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of $S_{ID}/I_D{^2}$ on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.712-717
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• 2014

The performance of npn SiGe HBT on thin film SOI is investigated at 32 nm technology node by applying body bias. An n-well is created underneath thin BOX to isolate the body biased SOI HBT from SOI CMOS. The results show that the HBT voltage gain and power gain can be programmed by applying body bias to the n-well. This HBT can be used in variable gain amplifiers that are widely used in the receiver chain of RF systems. The HBT is compatible with 32 nm FDSOI technology having 10 nm film thickness and 30 nm BOX thickness. As the breakdown voltage increases by applying the body bias, the SOI HBT with 3 V $V_{CE}$ has very high $f_tBV_{CEO}$ product (839 GHzV). The self heating performance of the proposed SOI HBT is studied. The high voltage gain and power gain (60 dB) of this HBT will be useful in designing analog/RF systems which cannot be achieved using 32 nm SOI CMOS (usually voltage gain is in the range of 10-20 dB).

• 패션비즈니스
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• 제4권4호
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• pp.1-16
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• 2000

The purpose of this study is to investigate the formative beauty, changes in fashion and aesthetical sense that can be seen in the bias drapings of Madeleine Vionnet and her influences on modern fashion since she used draping as a new fashion means to represent the new feminine images which modernism of the early 20th century and social changes from the two great World War's generated, and to provide proper data to encourage designers' creativity that is wanting in the circle of Korea fashion. Bias draping led women to respect worship their body from the heart with seductive modernism enriching the material's texture to the utmost through geometrical patterns of triangle, quartered plane and quardrants and simple cylindrical cuts and with an attribute adapting itself to the wearer's body. Bias draped wear consisted of light and transparent materials and overall surface decoration revealed women's movements and sought the extension of environmental movements and demonstrated its eroticism. On the other hand, biased daywear gained anonymity through cutting true to body line and psychological protective quality as of cape, and this went well with the independent femininity accepting difference as well as pursuing revolution from the inside. The great inflation and the 2nd World War gave birth to escape from reality like surrealistic artistic tendencies and Hollywood films and increased romanticism. Bias draping once underwent unpopularity except in expensive clothes due to knit wear boom and the utilization of new elastic materials, however, it began to receive lights again from pluralization waves and retro tendencies and to be introduced in many designers' collections. A young genius of England, John Galliano improved functions of Haute Couture through creation of new styles and fantastic shows to promote profits in the fashion markets. Bias draping fitted in human body line provides us comfort and aesthetic qualities through careful choice of material and elegance by delicate cutting.

• 비만대사연구학술지
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• 제1권1호
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• pp.33-38
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• 2022

Although it has been confirmed that excessive body fat increases health risks and all-cause mortality, several epidemiological studies have reported that overweight or obesity in patients with chronic diseases and in older adults is advantageous with respect to mortality. Several mechanisms have been proposed to explain the biological basis of this obesity paradox. The marked heterogeneity of findings observed across studies and the possibility of systematic errors in these studies have cast doubt on the actual existence of the obesity paradox. However, the obesity paradox questioned the validity of body mass index as the best indicator for obesity in terms of predicting its comorbidities and urges clinicians to focus more on changes in body composition and related metabolic derangements, rather than body weight per se.

• 한국산업정보학회:학술대회논문집
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• 한국산업정보학회 2002년도 춘계학술대회 논문집
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• pp.195-199
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• 2002

This paper describes the effect of substrate back bias of CMOS Inverter. When the substrate back bias applied in body, the MOS transistor threshold voltage increased and drain saturation current decreased. The back gate reverse bias or substrate bias has been widely utilized and the following advantage has suppressing subthreshold leakage, lowering parasitic junction capacitance, preventing latch up or parasitic bipolar transistor, etc. When the reverse voltage applied substrate, this paper stimulated the propagation delay time CMOS inverter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.485-488
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• 1999

In this paper, the effects of back-gate bias on n-channel SOI MOSFETs has been systematically investigated. Back-gate surface is accumulated when negative bias is applied. It is found that the driving current ability of SOI MOSFETs is reduced because the threshold voltage and subthreshold slope are increased and transconductance is decreased due to the hole accumulation in Si body.

• 반도체디스플레이기술학회지
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• 제14권2호
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• pp.41-45
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• 2015

From 20nm technology node, the finFET has become standard device for ULSI's. However, the finFET process made stacking gate non-volatile memory obsolete. Some reported capacitor-less DRAM structure by utilizing the FBE. We present possible non-volatile memory device structure similar to the dual gate MOSFET. One of the gates is left floating. Since body of the finFET is only 40nm thick, control gate bias can make electron tunneling through the floating gate oxide which sits across the body. For programming, gate is biased to accumulation mode with few volts. Simulation results show that the programming electron current flows at the interface between floating gate oxide and the body. It also shows that the magnitude of the programming current can be easily controlled by the drain voltage. Injected electrons at the floating gate act similar to the body bias which changes the threshold voltage of the device.

• 복식문화연구
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• 제20권4호
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• pp.594-603
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• 2012

This study aimed to investigate a bias pattern making method with geometrical approach. The bias-cut dress has soft silhouette of drape in the garment. However, the bias cut dress has problem of satisfying the intended garment size spec. This problem occurs from various sources. The main reason is that the bias-cut fabric tends to stretch on longitudinal direction and to shrink horizontal direction when it was hung on the body. The goal of this study was to develop a bias-cut dress pattern making method satisfying the intended garment size spec. The researchers developed the geometrical method of measuring dimensional change by calculating the compensation ratio of the fabric in true bias direction. The compensation ratio was calculated by applying draping ratio of the fabric. Three types of fabrics were used in the experiment. The warp and weft crossing angle of fabric was ranged from $78^{\circ}$ to $82^{\circ}$. The fabrics stretched longitudinally 6.9~9.9% and shrank horizontally 7.2~11.0%. The compensation ratio of the bias-cut pattern for sample dress was calculated for each fabric type. Two types of experimental bias-cut dress patterns were developed for each fabric. One pattern was made with applying full compensation ratio and the other one made with applying partial ratio of the fabric. Experimental dresses were made with these patterns. The results of the evaluation showed that the bias-cut dress pattern applying the partial compensation ratio was more appropriate than the pattern applying the full compensation ratio.

• 한국직업건강간호학회지
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• 제25권3호
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• pp.199-207
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• 2016

Purpose: The purpose of this study was to identify the obesity stress, weight bias and health care on Body Mass Index (BMI) in soldiers of non-combat area and to provide data for improving the quality of their life. Methods: This research involved 165 soldiers working in non-combat area. Data collection was conducted from November 1 to 20, 2015. Statistical analysis of the collected data were t-test and ANOVA, $Scheff{\acute{e}}$ method post hoc analysis, Pearson's correlation coefficients, and multiple liner regression using IBM SPSS 22.0. Results: The mean score of obesity stress was moderate ($19.05{\pm}5.28$). The mean score of weight bias was 69.03 and health care was 2.41 points. There are a positive correlation between obesity stress and BMI (r=.19, p<.05). Weight bias (r=-.19, p<.01) and health care (r=-.26, p<.01) among the subjects had negative correlations with BMI. In a multiple liner regression, obesity stress (${\beta}=.18$, p<.05), health care (${\beta}=-.18$, p<.05) were associated with BMI. Conclusion: Based on the findings that obesity stress and health care influence BMI, there is a need to control stress and to properly set proper guidelines on health care for soldiers.