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http://dx.doi.org/10.5573/JSTS.2013.13.6.655

Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions  

Kwon, Sung-Kyu (Dept. of Electronics Engineering, Chungnam National University)
Kwon, Hyuk-Min (Dept. of Electronics Engineering, Chungnam National University)
Kwak, Ho-Young (Dept. of Electronics Engineering, Chungnam National University)
Jang, Jae-Hyung (Dept. of Electronics Engineering, Chungnam National University)
Shin, Jong-Kwan (Dept. of Electronics Engineering, Chungnam National University)
Hwang, Seon-Man (Dept. of Electronics Engineering, Chungnam National University)
Sung, Seung-Yong (Dept. of Electronics Engineering, Chungnam National University)
Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University)
Lee, Song-Jae (Dept. of Electronics Engineering, Chungnam National University)
Han, In-Shik (Magnachip Semiconductor)
Chung, Yi-Sun (Magnachip Semiconductor)
Lee, Jung-Hwan (Magnachip Semiconductor)
Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.13, no.6, 2013 , pp. 655-661 More about this Journal
Abstract
In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of $S_{ID}/I_D{^2}$ on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.
Keywords
CMOSFET; 1/f noise; NMOSFET; PMOSFET; body bias; sub-threshold region;
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