• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2004년도 춘계학술대회논문집
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• pp.73-76
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• 2004

Tapping mode atomic force microscopy (TM-AFM) utilizes the dynamic response of a resonating probe tip as it approaches and retracts from a sample to measure the topography and material properties of a nanostructure. We present recent results based on numerical techniques that yield new perspectives and insight into AFM. It is compared that the dynamic models including van der Waals and Derjaguin-Muller-Toporov(DMT) or Johnson-Kendall-Roberts(JKR) contact forces demonstrates that periodic solutions can be represented with respect to the approach distance and excitation frequency.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.294-297
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• 2012

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at $1,650^{\circ}C$ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1560-1565
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• 2003

Tapping mode atomic force microscopy (TM-AFM) utilizes the dynamic response of a resonating probe tip as it approaches and retracts from a sample to measure the topography and material properties of a nanostructure. We present recent results based on nonlinear dynamical systems theory, computational continuation techniques and detailed experiments that yield new perspectives and insight into AFM. A dynamic model including van der Waals and Derjaguin-Muller-Toporov (DMT) contact forces demonstrates that periodic solutions can be represented with respect to the approach distance and excitation frequency. Turning points on the surface lead to hysteretic amplitude jumps as the tip nears/retracts from the sample. Experiments are performed using a tapping mode tip on a graphite sample to verify the predictions.

• 한국소음진동공학회논문집
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• 제20권4호
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• pp.414-421
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• 2010

The proper orthogonal decomposition(POD) is used to the vibration analysis of microcantilever in tapping mode atomic force microscopy(AFM). The proper orthogonal modes (POM) are extracted from vibrating signals of microcantilever when it resonates and taps the sample. We present recent ideas based on POD and detailed experiments that yield new perspectives into the microscale structures such as the tapping cantilever. The linearized modeling technique based on POD is very useful to show the principal characteristics of the complex dynamic responses of the AFM microcantilever.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.64-64
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• 2009

Atomic force microscopy (AFM) fabrication of oxide patterns is an attractive technique for nanoscale patterns and related device structures, SiC exhibits good performance in high-power, high-frequency, and high-temperature conditions that is comparable to the performance of Si. The AFM fabrication of oxide patterns on SiC is important for electronic applications. However, there has not been much reported investigations on oxidation of SiC using AFM. We achieved the local oxidation of 4H-SiC using the high loading force of ~100 nN, although the oxidation of SiC is generally difficult mainly due to the physical hardness and chemical inactivity. All the experiments were performed using atomic force microscopy (S.I.S. GmbH, Germany) with a Pt/Ir-coated Si tip at ~40% humidity and room temperature. The spring constant and resonance frequency of the tip were around ~3 N/m and ~70 kHz. We fabricated oxide patterns on n-type 4H-SiC ($\sim10^{19}/cm^3$) and n-type Si ($\sim1.9\times10^{16}/cm^3$). In summary, we demonstrated that the oxide patterns can be obtained over the electric field of ${\sim}\times10^7 V/cm$ and the high loading force using the tip as a cathode. The electric field transports the oxyanions (OH-) to the positively biased surface.

• Applied Microscopy
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• 제50권
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• pp.28.1-28.6
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• 2020

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

• Journal of Microbiology and Biotechnology
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• 제19권6호
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• pp.547-555
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• 2009

Nanoscopic changes in the cell surface morphology of the yeasts Saccharomyces cerevisiae (strain NCYC 1681) and Schizosaccharomyces pombe (strain DVPB 1354), due to their exposure to varying concentrations of hydrogen peroxide (oxidative stress), were investigated using an atomic force microscope (AFM). Increasing hydrogen peroxide concentration led to a decrease in cell viabilities and mean cell volumes, and an increase in the surface roughness of the yeasts. In addition, AFM studies revealed that oxidative stress caused cell compression in both S. cerevisiae and Schiz. pombe cells and an increase in the number of aged yeasts. These results confirmed the importance and usefulness of AFM in investigating the morphology of stressed microbial cells at the nanoscale. The results also provided novel information on the relative oxidative stress tolerance of S. cerevisiae and Schizo pombe.

• 대한화장품학회지
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• 제45권4호
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• pp.373-380
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• 2019

얼굴과 하박내측의 피부는 경피수분손실량(TEWL), 피부 수분량, 탄력 등에서 많은 차이를 보이고 있다. 특히, 이전 연구 결과에서 얼굴피부와 하박내측 피부는 수화(hydrating) 과정에 따른 탄력특성의 차이를 보여 주었다. 이에 본 연구에서는 신체부위에 따른 피부특성 차이는 각 신체부위를 구성하고 있는 각질세포 특성과 연관성이 있을 것이라는 가정하에 atomic force microscopy (AFM)을 이용하여 각질세포 표면 특성을 비교 연구하였다. 각질세포 표면의 거칠기(roughness)와 villus-like projections (VPs)을 이용하여 비교 평가 하였다. 더 나아가 얼굴피부, 하박내측, 입술 피부의 각질세포 표면을 정성적으로 비교해 보았다. 각질세포는 8명의 피험자의 얼굴과 하박내측 피부에서 tape-stripping을 이용하여 채취하여, AFM을 이용하여 40 ㎛ × 40 ㎛ 크기로 각질세포의 아랫면 표면 특성(bottom surface of corneocyte)을 측정하였다. 그 결과, 얼굴 각질세포 아랫면 표면 거칠기는 388.34 ± 86.189 nm이었고, 하박내측 각질세포 아랫면 표면 거칠기는 662.27 ± 224.257 nm로 하박내측 각질세포가 얼굴 각질세포보다 더 거친 표면 특성임을 확인하였다(p < 0.001). 관찰된 VPs의 양을 비교해보면, 입술 각질세포가 가장 많았고, 그 다음이 얼굴 각질세포이며, 하박내측 각질세포는 낮은 수준이었다. 이러한 결과를 통해 볼때, 각질세포 표면 특성이 얼굴과 하박내측 피부 사이에 보이는 특성 차이에 어느 정도 관여하고 있음을 확인할 수 있었으며, VPs는 부위별 피부 특성 연구에 유용한 parameter가 될 수 있는 가능성도 확인할 수 있었다. 그리고, AFM은 각질세포 표면의 미세한 구조적 차이를 비교 연구하는데 매우 유용한 기기임을 알 수 있었다. 향후 조금 더 많은 연구가 진행된다면 각질세포에 대한 새로운 화장품 효능 평가법이 개발될 것으로 사료된다.

• 한국정밀공학회지
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• 제19권3호
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• pp.13-18
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• 2002

• 한국재료학회지
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• 제28권11호
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.