[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/JKEM.2012.25.4.294

Local Oxidation Characteristics on Implanted 4H-SiC by Atomic Force Microscopy

Lee, Jung-Ho (Department of Electronic Materials Engineering, Kwangwoon University)
Ahn, Jung-Joon (Department of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)

Publication Information

Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.4, 2012 , pp. 294-297 More about this Journal

Abstract

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at $1,650^{\circ}C$ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

Keywords

4H-SiC; AFM; Local oxidation;

Citations & Related Records

Reference

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KSCI

Local Oxidation Characteristics on Implanted 4H-SiC by Atomic Force Microscopy 원자힘 현미경을 이용한 이온 주입된 4H-SiC 상의 국소 산화 특성

Local Oxidation Characteristics on Implanted 4H-SiC by Atomic Force Microscopy