• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.62-64
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• 2015

We have investigated zinc tin oxide (ZTO) thin films under various silicon ratios. ZTO TFTs were fabricated by solution processing with the bottom gate structure. Furthermore, annealing process was performed at different temperatures in various annealing conditions, such as air, vacuum and wet ambient. Completed fabrication of ZTO TFT, and the performance of TFT has been compared depending on the annealing conditions by measuring the transfer curve. In addition, structure in ZTO thin films has been investigated by X-ray diffraction spectroscopy (XRD) and Scanning electron microscope (SEM). It is confirmed that the electrical performance of ZTO TFTs are improved by adopting optimized annealing conditions. Optimized annealing condition has been found for obtaining high mobility.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.752-755
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• 2006

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.327-331
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• 1997

As demand for various kinds and small lot products has been increasing, batch annealing has been appreciated for its small restiction for the opteration. The cold spot of the coil is very important in the BAF(Batch annealing furnace) annealing process. Because of the annealing cycle time in the BAF, annealing was decided on the cold spot of the coil. So, we tested the effect,variation of cold spot, for hydrogen contents of atmospheric gas at the annealing furnace. As a result of several investigations. We confirmed the following characteristics ; after the heating and soaking,the cold spot of coil moved to 1/3 of coil thickness in the NHx atmospheric gas, but the mid point of the coil thickness is the cold spot in the Ax or .H/sub2. atmospheric gas. Therefore, the use of hydrogen instead of nitrogen as the protective gas,combined with high convection in batch annealing furnaces, has shown that considerable increases in furnace output and material quality are attainable. Owing to the low density, high diffusion and reducing character of hydrogen, a better transfer resulting in uniform material temperatures and improved coil surfaces can be achieved.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.560-564
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• 1996

In recently, annealing process of cold rolled sheet tend to change to continuous annealing process for improving qualify, saving yield. In the meantime as demand for various kind and small lot of products has been increasing, batch annealing has been appreciated for its small restriction for the operation. So, we tested on the effect for a hydrogen contents of atmospheric gas at annealing furnace. As a result of several investigation. We confirmed for the following characteristics ; improved productivity, uniform heating, improved surface quality, saving energy. Therefore, the use of hydrogen instead of nitrogen as the protective gas, combined with high convection in batch annealing furnaces, has shown that considerable increases in furnace output and material quality are attainable. Owing to the low density, high diffusion and reducing character of hydrogen, a better transfer resulting in uniform material temperatures and improved coil surfaces can be achieved.

• 한국세라믹학회지
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• 제43권9호
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 추계학술대회 논문집
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• pp.138-141
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• 2008

The effects of annealing temperature and time on mechanical properties and microstructures were investigated in cold drawn pearlitic steel wires. During annealing, the increment of the tensile strength at low temperatures found to be due to age hardening, while the decrease in the tensile strength at high temperatures was attributed to age softening, involving the spheroidization of lamellar cementite and recovery of lamellar ferrite. Since tensile strength and the occurrence of the delamination would be closely related to the dissolution of cementite, the lower annealing temperature and the increase of drawing strain caused the higher tensile strength and the easier occurrence of the delamination in cold drawn pearlitic steel wires.

• Composites Research
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• 제18권2호
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• pp.38-45
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• 2005

본 연구에서는 시차주사열량분석장치와 X-선 회절장치를 이용하여 어닐링 열처리 조건에 따른 니티놀 형상기억합금의 상변환 특성과 결정구조를 조사하였다. 어닐링 열처리 조건으로는 열처리 시간과 열처리 온도를 고려하였으며 특히 열처리 시간은 5분. 15분, 30분, 45분 그리고 열처리 온도는 $400^{\circ}C,\;500^{\circ}C,\;525^{\circ}C,\;550^{\circ}C,\;575^{\circ}C,\;600^{\circ}C,\;700^{\circ}C,\;800^{\circ}C,\;and\;900^{\circ}C$를 적용하였다 연구결과에 따르면 열처리 시간과 열처리 온도 등의 어닐링 열처리 조건은 니티놀 형상기억합금의 상변환 특성과 결정구조에 큰 영향을 미침을 알 수 있었다.

• 한국세라믹학회지
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• 제29권1호
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• pp.29-34
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• 1992

Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.

• 한국분말재료학회지
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• 제22권4호
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• pp.278-282
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• 2015

The GaN-powder scrap generated in the manufacturing process of LED contains significant amounts of gallium. This waste can be an important resource for gallium through recycling of scraps. In the present study, the influence of annealing temperatures on the structural properties of GaN powder was investigated when the waste was recycled through the mechanochemical oxidation process. The annealing temperature varied from $200^{\circ}C$ to $1100^{\circ}C$ and the changes in crystal structure and microstructure were studied. The annealed powder was characterized using various analytical tools such as TGA, XRD, SEM, and XRF. The results indicate that GaN structure was fully changed to $Ga_2O_3$ structure when annealed above $900^{\circ}C$ for 2 h. And, as the annealing temperature increased, crystallinity and particle size were enhanced. The increase in particle size of gallium oxide was possibly promoted by powder-sintering which merged particles to larger than 50 nm.

• 산업진흥연구
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• 제1권1호
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• pp.1-6
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• 2016

산화물반도체의 결정질특성과 비정질특성을 이해하기 이하여 AZO 박막과 IGZO 박막을 증착하고 열처리하여 물리적 화학적인 특성을 비교하였다. AZO 박막은 열처리온도가 올라갈수록 결정성이 높아졌으나 IGZO 박막은 열처리온도가 높을수록 비정질특성이 우수하였다. AZO 박막은 열처리에 따라서 PL, XPS 분석에서 화학적 이동이 나타났으나 IGZO 박막은 화학적 이동이 나타나지 않았다. AZO의 O 1s 결합 에너지는 531.5 eV였으며, IGZO 박막은 530 eV으로 낮았다.