Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Dielectric Properties and Leakage Current Characteristics of Ta2O5 Thin Film Prepared by Sol-Gel Process

Sol-Gel법으로 제조된 Ta2O5 박막의 유전특성과 누설전류 특성

  • 오태성 (한국과학기술연구원 정밀요업연구실) ;
  • 이창봉 (한국과학기술연구원 정밀요업연구실) ;
  • 이병찬 (한국과학기술연구원 정밀요업연구실) ;
  • 오영제 (한국과학기술원 무기재료연구실) ;
  • 김윤호 (한국과학기술연구원 정밀요업연구실)
  • Published : 1992.01.01
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Abstract

Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.

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References

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