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http://dx.doi.org/10.4191/KCERS.2006.43.9.527

Frequency Characteristics of Li Doped ZnO Thin Film Resonator by Annealing Temperatures  

Kim, Eung-Kwon (Department of Information and Communication, Sungkyunkwan University)
Kim, Young-Sung (Advanced Material Process of Information Technology, Sungkyunkwan University)
Publication Information
Journal of the Korean Ceramic Society / v.43, no.9, 2006 , pp. 527-531 More about this Journal
Abstract
In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.
Keywords
FBAR; Li-doped ZnO; Annealing temperature; Return loss;
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