Industry Promotion Research (산업진흥연구)

Industrial Promotion Institute (산업진흥원)
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A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature

결정질AZO 박막과 비정질IGZO 박막의 결정구조와 결합에너지와의 상관성

  • 소영호 (청주대학교 반도체공학과) ;
  • 송정호 (청주대학교 반도체공학과) ;
  • 서동명 (청주대학교 반도체공학과) ;
  • 오데레사 (청주대학교 반도체공학과)
  • Received : 2015.12.28
  • Accepted : 2016.01.11
  • Published : 2016.01.31
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Abstract

To research the correlation between the amorphous and crystal structure of oxide semiconductors, AZO and IGZO films were deposited and annealed with various temperatures in a vacuum state. AZO increased the degree of crystal structure with increasing the annealing temperature, but IGZO became an amorphous structure after the annealing process at high temperature. The series of AZO films with various annealing temperatures showed the chemical shift from the analyzer of PL and O 1s spectra, but the results of IGZO films by PL and O 1s spectra were not observed the chemical shift. The binding energy of oxygen vacancy of AZO with a crystal structure was 531.5 eV, and that of IGZO with an amorphous structure was 530 eV as a lower binding energy.

산화물반도체의 결정질특성과 비정질특성을 이해하기 이하여 AZO 박막과 IGZO 박막을 증착하고 열처리하여 물리적 화학적인 특성을 비교하였다. AZO 박막은 열처리온도가 올라갈수록 결정성이 높아졌으나 IGZO 박막은 열처리온도가 높을수록 비정질특성이 우수하였다. AZO 박막은 열처리에 따라서 PL, XPS 분석에서 화학적 이동이 나타났으나 IGZO 박막은 화학적 이동이 나타나지 않았다. AZO의 O 1s 결합 에너지는 531.5 eV였으며, IGZO 박막은 530 eV으로 낮았다.

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References

  1. H. M. Kim and J. J. kim, "Heat Treatment Effects on the Electrical Properties of $In_2O_3$-ZnO films Prepared by RF-Mmagnetron Sputtering Method," Journal of the Korean Vacuum Society, Vol.14, No.4, pp.238-244, 2005.
  2. Dong-Geun Yoo, Myoung-Hwa Kim, Seong-Hun Jeong, Jin-Hyo Boo, "Study on Wet Chemical Etching Characterization of Zinc Oxide Film for Transparency Conductive Oxide Application," Journal of the Korean Vacuum Society, Vol.17, pp.73-79, 2008. https://doi.org/10.5757/JKVS.2008.17.1.073
  3. B. K. Lee and K. M. Lee, "Structural and Electrical Characteristics of IZO Thin Films Deposited on Flexible Substrate," Journal of the Semiconductor & Display Technology, Vol. 10, pp43-49, 2011.
  4. Su-Kyeong Kwon and Kyu-Mann Lee," Electrical and Optical Characteristics of IZO Thin Films Deposited in Different Oxygen Flow Rate," Journal of the Semiconductor & Display Technology Vol. 12, pp49-54, 2013.
  5. Ya Jun Zhang and Hong Bae Kim," The Optical and Electrical Properties of IGZO Thin Film Fabricated by RF Magnetron Sputtering According to RF Power," Journal of the Semiconductor & Display Technology, Vol. 12, pp. 42-45, 2013.
  6. Seong-Jin Jeong, Deok-Kyu KiM and Hong-Bae Kim," Properties of ITO Thin Films Deposited by RF Magnetron Sputtering with Process Pressure ," Journal of the Semiconductor & Display Technology, Vol. 9, pp. 83-86, 2010.
  7. D. G. Jun, Y. L. Lee and K. M. Lee," Structural and Electrical Characteristics of IZO Thin Films with Deposition Temperature," Journal of the Semiconductor & Display Technology, Vol. 10, pp. 67-74, 2011.
  8. Sang-Heon Lee, Keun-Tae Park and Young-Guk Son, "Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films," Korea Jonral of Materials Reasearch, Vol.12, pp. 240-247, 2002. https://doi.org/10.3740/MRSK.2002.12.4.240
  9. Meng Yu and Jungyol Jo," Sputtering Growth of ZnO Thin-Film Transistor Using Zn Target," Journal of the Semiconductor & Display Technology, Vol. 13, pp. 35-38, 2014.
  10. Dukyean Yoo, Hyoungju Kim, Junyeong Kim and Jungyol Jo, "Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions," Journal of the Semiconductor & Display Technology, Vol. 13,pp. 63-66, 2014.
  11. Sun Moon Jin , Chul Woo Ahn, Nam In Cho, and Hyoung Gin Nam," The Effect of Ar Plasma Treatment on Al-doped ZnO," Journal of the Semiconductor & Display Technology, Vol. 10, pp. 43-46 ,2011.
  12. B. K. Lee and K. M. Lee," Effect of Surface Roughness of AZO Thin Films on the Characteristics of OLED Device," Journal of the Semiconductor & Display Technology, Vol. 9, pp. 25-29, 2010.
  13. Jong-Wook Kim, Chang-Su Hwang and Hong-Bae Kim, "The Transparent Semiconductor Characteristics of ZnO Thin Films Fabricated by the RF Magnetron Sputtering Method," Journal of the Semiconductor & Display Technology Vol. 9, pp. 43-50, 2010.
  14. Hong Woo Lee, Bong Seob Yang, Seungha Oh, Yoon Jang Kim, Hyeong Joon Kim, "The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure," Journal of the Semiconductor & Display Technology, Vol. 13, pp. 44-48, 2014.
  15. Ki Cheol Park1 and Tae Young Ma, "Effects of Oxygen on the Properties of Mg-doped Zinc Tin Oxide Films Prepared by RF Magnetron Sputtering," Vol. 26, pp. 373-379, 2013. https://doi.org/10.4313/JKEM.2013.26.5.373
  16. Tae Young Ma, "The Effects of Oxygen Partial Pressure and Post-annealing on the Properties of ZnO-SnO2 Thin Film Transistors," Vol. 25, pp. 304-308, 2012. https://doi.org/10.4313/JKEM.2012.25.4.304
  17. Teresa Oh, "Electrical Characteristics of Thin Film Transistor According to the Schottky Contacts," Korean Journal of Materials Research, Vol.24, pp.135-139, 2014. https://doi.org/10.3740/MRSK.2014.24.3.135