• 한국전기전자재료학회논문지
• /
• 제20권3호
• /
• pp.263-267
• /
• 2007

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.418-419
• /
• 2006

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• 전자공학회논문지A
• /
• 제30A권8호
• /
• pp.34-41
• /
• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• 한국전기전자재료학회논문지
• /
• 제18권6호
• /
• pp.554-559
• /
• 2005

Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.61-62
• /
• 2005

The present article deals with in situ post annealing of ZnO in sputtering system. The ZnO thin films were grown at low temperature of $100^{\circ}C$ and at working pressure of 15 mTorr with RF magnetron sputtering. Having been gown, ZnO thin films were annealed in situ at different temperatures, at annealing ambient pressure of 15 mTorr and in ambients of oxygen and argon respectively. Through analyses of XRDs, it is can be concluded that the crystallinity of annealed ZnO thin films becomes much better than that of as-grown ZnO thin film.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제54권3호
• /
• pp.103-108
• /
• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권7호
• /
• pp.525-529
• /
• 1999

The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

• Transactions on Electrical and Electronic Materials
• /
• 제12권3호
• /
• pp.127-130
• /
• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• 한국진공학회지
• /
• 제6권3호
• /
• pp.206-212
• /
• 1997

차세대 반도체 소자의 배선재료로 사용될 것으로 예상되는 구리의 reflow 특성을 조 사하였다. 구리박막을 hole 및 trench 패턴 위에 금속유기화학증착법으로 증착하고 $350^{\circ}C$에 서 $550^{\circ}C$까지의 열처리 온도 범위 및 질소, 산소 분위기에서 열처리하였다. 질소 분위기에서 열처리 한 경우에는 구리가 패턴을 채우지 못하였고 열처리 온도 $450^{\circ}C$ 이상의 산소 분위기 에서 열처리 한 경우에는 reflow에 의하여 구리가 패턴을 채웠다. 이러한 현상은 구리의 산 화시 발생되는 열에 의하여 부분적으로 액상화된 구리가 표면에너지 및 위치에너지를 감소 시키기 위하여 패턴을 채우면서 발생하는 것으로 생각된다. 산소 분위기에서 열처리한 경우 에는 응집물 표면에 300$\AA$이하의 구리 산화물이 형성되었으며 열처리 온도 $550^{\circ}C$에서 구리 의 응집에 의하여 비저항이 급격하게 증가하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제10권3호
• /
• pp.93-96
• /
• 2009

The Al-doped ZnO (AZO) films were deposited on a glass substrate by RF magnetron sputtering in pure Ar and $Ar+H_2$ gas ambient at temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature range from 100 to 300 $^{\circ}C$, respectively. It was found that either the addition of hydrogen to the sputtering gas or the annealing treatment effectively reduced the resistivity of the AZO films. When the AZO films were annealed at the temperature of 300 $^{\circ}C$ for lhr in a hydrogen atmosphere, the resistivity decreased from $2.60{\times}10^{-3}\;{\Omega}cm$ to $8.42{\times}l0^{-4}\;{\Omega}cm$ for the film deposited in pure Ar gas ambient. Under the same annealing conditions of temperature and hydrogen ambient, the resistivity of AZO films deposited in the $Ar+H_2$ gas mixture decreased from $8.22{\times}l0^{-4}\;{\Omega}cm$ to $4.25{\times}l0^{-4}\;{\Omega}cm$. The lowest resistivity of $4.25{\times}l0^{-4}\;{\Omega}cm$ was obtained by adding hydrogen gas to the deposition and annealing process. X-ray diffraction (XRD) pattern of all films showed preferable growth orientation of (002) plane. The average transmittance is above 85 % and in the range of 400-1000 nm for all films.