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http://dx.doi.org/10.4313/JKEM.2005.18.6.554

Micro Structure and Surface Characteristics of NiCr Thin films Prepared by DC Magnetron Sputter according to Annealing Conditions  

Kwon, Yong (조선대학교 신소재공학과)
Kim, Nam-Hoon (조선대학교 에너지자원신기술연구소)
Choi, Dong-You (조선대학교 에너지자원신기술연구소)
Lee, Woo-Sun (조선대학교 전기공학과)
Seo, Yong-Jin (대불대학교 전기전자공학과)
Park, Jin-Seong (조선대학교 신소재공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.6, 2005 , pp. 554-559 More about this Journal
Abstract
Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.
Keywords
NiCr thin film; DC magnetron sputter; Annealing; X-ray photoelectron spectroscopy (XPS);
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