Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.418-419
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- 2006
The Influence of Ambient Gas on Photoluminescence of Europium-silicate Thin Films
Europium 실리케이트의 열처리 조건에 따른 특성 변화
- Kim, Eun-Hong (Korea Univ) ;
- Shin, Young-Chul (Korea Univ) ;
- Choi, Won-Chel (Korea Univ) ;
- Kim, Bum-Jun (Samsung Electro-Mechanics) ;
- Kim, Min-Ho (Samsung Electro-Mechanics) ;
- Kim, Tae-Geun (Korea Univ)
- Published : 2006.06.22
Abstract
We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from