Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Investigation of growth of ZnO thin films via RE sputtering system and in-situ post annealing

  • Jin, Hu-Jie (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Lim, Keun-Young (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • So, Byung-Moon (Iksan National Coll.) ;
  • Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
  • Published : 2005.11.10
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Abstract

The present article deals with in situ post annealing of ZnO in sputtering system. The ZnO thin films were grown at low temperature of $100^{\circ}C$ and at working pressure of 15 mTorr with RF magnetron sputtering. Having been gown, ZnO thin films were annealed in situ at different temperatures, at annealing ambient pressure of 15 mTorr and in ambients of oxygen and argon respectively. Through analyses of XRDs, it is can be concluded that the crystallinity of annealed ZnO thin films becomes much better than that of as-grown ZnO thin film.

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