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http://dx.doi.org/10.4313/JKEM.2007.20.3.263

Property Changes of Europium-Silicate Thin Films depending on the Ambient Gas  

Kim, Eun-Hong (고려대학교 전자공학과)
Shin, Young-Chul (고려대학교 전자공학과)
Leem, Si-Jong (고려대학교 전자공학과)
Hahn, Cheol-Koo (전자부품연구원 나노광전센터)
Kim, Tae-Geun (고려대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.3, 2007 , pp. 263-267 More about this Journal
Abstract
We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.
Keywords
Europium silicate; RF-sputtering; Rapid thermal annealing; Photoluminescence;
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